Internal microstrain and distribution of composition and cathodoluminescence over lapped AlxGa1−xN epilayers on sapphire View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-11

AUTHORS

A. S. Usikov, V. V. Tret’yakov, A. V. Bobyl’, R. N. Kyutt, W. V. Lundin, B. V. Pushnyi, N. M. Shmidt

ABSTRACT

Structural properties and spatial inhomogeneity of MOCVD-grown AlxGa1−xN layers on (0001) sapphire substrates were studied. A nonuniform distribution of Al across the epilayer was observed in layers grown at constant flux rates of precursors. The model of compositionally graded layer formation is proposed on the basis of cathodoluminescence and X-ray data. It is established that homogeneous samples can be obtained by increasing the flux rate of trimethylaluminum at the initial stage of epilayer growth compared with that in all further stages. Lowering the growth rate reduces strain in epitaxial AlxGa1−xN layers. The influence of strain on the luminescence properties of the layers is discussed. More... »

PAGES

1248-1254

References to SciGraph publications

  • 1997. MOVPE Growth and Structural Characterization of AlxGa1-xN in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1997. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1998. Macro- and microstrains in MOCVD-grown GaN in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1999. Doping of AlGaN Alloys in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1999. Optical Investigations of AlGaN on GaN Epitaxial Films in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/1.1325417

    DOI

    http://dx.doi.org/10.1134/1.1325417

    DIMENSIONS

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