The properties of InGaAsP/InP heterolasers with step-divergent waveguides View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-10

AUTHORS

E. G. Golikova, V. A. Kureshov, A. Yu. Leshko, D. A. Livshits, A. V. Lyutetskii, D. N. Nikolaev, N. A. Pikhtin, Yu. A. Ryaboshtan, S. O. Slipchenko, I. S. Tarasov, N. V. Fetisova

ABSTRACT

InGaAsP/InP laser heterostructures with step-divergent waveguides and two stressed quantum wells were obtained by metalorganic VPE. The lasers emitting at 1.55 μm provide for an intrinsic quantum yield of ηi=85%. An optical power of 5.2 W in the continuous operation mode was achieved at a laser diode temperature of 10°C. The internal optical losses in the laser heterostructure studied amount to 3.6 cm−1, which is comparable with the level of losses in similar structures with uniform divergent waveguides. More... »

PAGES

913-915

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1321237

DOI

http://dx.doi.org/10.1134/1.1321237

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017564719


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