Nanostructured a-Si:H films obtained by silane decomposition in a magnetron chamber View Full Text


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Article Info

DATE

2000-09

AUTHORS

O. A. Golikova, M. M. Kazanin, A. N. Kuznetsov, E. V. Bogdanova

ABSTRACT

Nanostructured a-Si:H films grown by the MASD method at various deposition temperatures (Ts=300–390°C) were studied. Among these films, those “on the verge of crystallinity” are of particular interest, because they tend to crystallize. In addition, although their electron-transport parameters are slightly inferior to those of conventional device-grade a-Si:H, they are preferable because of the higher stability of their photoconductivity under exposure to light. More... »

PAGES

1085-1089

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1309428

DOI

http://dx.doi.org/10.1134/1.1309428

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1019255408


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