Ontology type: schema:ScholarlyArticle
2000-09
AUTHORSO. A. Golikova, M. M. Kazanin, A. N. Kuznetsov, E. V. Bogdanova
ABSTRACTNanostructured a-Si:H films grown by the MASD method at various deposition temperatures (Ts=300–390°C) were studied. Among these films, those “on the verge of crystallinity” are of particular interest, because they tend to crystallize. In addition, although their electron-transport parameters are slightly inferior to those of conventional device-grade a-Si:H, they are preferable because of the higher stability of their photoconductivity under exposure to light. More... »
PAGES1085-1089
http://scigraph.springernature.com/pub.10.1134/1.1309428
DOIhttp://dx.doi.org/10.1134/1.1309428
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