Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-09

AUTHORS

P. N. Brunkov, V. V. Chaldyshev, A. V. Chernigovskii, A. A. Suvorova, N. A. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

ABSTRACT

The accumulation of electrons and holes in GaAs layers that contained As clusters and were sandwiched between n-and p-type buffer GaAs layers was revealed by capacitance-voltage measurements. As a result of majority-carrier accumulation, expansive depletion regions are formed in the adjoining buffer layers. Simulation of the capacitance-voltage characteristics, based on a numerical solution of the Poisson equation, shows that the accumulated charge density is ∼1×1012 cm−2, which is comparable with the concentration of As nanoclusters determined by transmission electron microscopy. More... »

PAGES

1068-1072

Journal

TITLE

Semiconductors

ISSUE

9

VOLUME

34

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1309425

DOI

http://dx.doi.org/10.1134/1.1309425

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015859768


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