Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-06

AUTHORS

V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Bolotov, V. A. Sachkov, E. A. Galaktionov, A. V. Kretinin

ABSTRACT

The phonon-plasmon interaction in tunneling GaAsn/AlAsm superlattices (m=5and 6≥n≥0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the thickness of GaAs quantum wells decreases and the electronic states in the superlattices become delocalized due to tunneling. It is assumed that the plasmons also interact with the TO-like phonon modes localized in quantum islands or in thin ruffled layers. More... »

PAGES

477-480

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1307997

DOI

http://dx.doi.org/10.1134/1.1307997

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1014050740


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