Ontology type: schema:ScholarlyArticle
2000-06
AUTHORSV. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Bolotov, V. A. Sachkov, E. A. Galaktionov, A. V. Kretinin
ABSTRACTThe phonon-plasmon interaction in tunneling GaAsn/AlAsm superlattices (m=5and 6≥n≥0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the thickness of GaAs quantum wells decreases and the electronic states in the superlattices become delocalized due to tunneling. It is assumed that the plasmons also interact with the TO-like phonon modes localized in quantum islands or in thin ruffled layers. More... »
PAGES477-480
http://scigraph.springernature.com/pub.10.1134/1.1307997
DOIhttp://dx.doi.org/10.1134/1.1307997
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