Visualization of the ion projected range region in GaAs irradiated with argon ions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-01

AUTHORS

V. M. Busov, G. B. Venus, G. M. Gusinskii, N. D. Il’inskaya, V. O. Naidenov, A. A. Pasternak, E. L. Portnoi, S. I. Troshkov

ABSTRACT

Cleavages of GaAs samples irradiated with 2.1, 4.6, and 8.4 MeV Ar+ ions were studied by scanning electron microscopy (SEM). SEM visualization of the ion projected range region was used to determine the range of Ar+ projectiles in the semiconductor target.

PAGES

75-76

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1262746

DOI

http://dx.doi.org/10.1134/1.1262746

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020282572


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