Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-04

AUTHORS

A. S. Usikov, V. V. Tret’yakov, V. V. Lundin, Yu. M. Zadiranov, B. V. Pushnyi, S. G. Konnikov

ABSTRACT

A study was made of the growth regimes of undoped epitaxial GaN layers under various substrate nitriding conditions. It was observed that at a nitriding temperature of ∼1000 °C films are formed with typical growth characteristics in the form of hexagonal pyramids separated by a smoothed surface. The cathodoluminescence pattern in the pyramids revealed a fine structure in which a region of donor-acceptor recombination could be identified. The formation of acceptor levels in this region was attributed to intrinsic structural defects in the GaN layers with unsaturated (broken) bonds. The presence of a donor-acceptor recombination line in mirror-smooth epitaxial films may indicate that these films contain this type of structural defect. More... »

PAGES

253-256

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1262443

DOI

http://dx.doi.org/10.1134/1.1262443

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1007528517


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Usikov", 
        "givenName": "A. S.", 
        "id": "sg:person.010242465455.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010242465455.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tret\u2019yakov", 
        "givenName": "V. V.", 
        "id": "sg:person.016037435257.14", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016037435257.14"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundin", 
        "givenName": "V. V.", 
        "id": "sg:person.013427374503.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zadiranov", 
        "givenName": "Yu. M.", 
        "id": "sg:person.014121041567.87", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014121041567.87"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Pushnyi", 
        "givenName": "B. V.", 
        "id": "sg:person.011356344575.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011356344575.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Konnikov", 
        "givenName": "S. G.", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1038/386351a0", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1005865224", 
          "https://doi.org/10.1038/386351a0"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "1999-04", 
    "datePublishedReg": "1999-04-01", 
    "description": "A study was made of the growth regimes of undoped epitaxial GaN layers under various substrate nitriding conditions. It was observed that at a nitriding temperature of \u223c1000 \u00b0C films are formed with typical growth characteristics in the form of hexagonal pyramids separated by a smoothed surface. The cathodoluminescence pattern in the pyramids revealed a fine structure in which a region of donor-acceptor recombination could be identified. The formation of acceptor levels in this region was attributed to intrinsic structural defects in the GaN layers with unsaturated (broken) bonds. The presence of a donor-acceptor recombination line in mirror-smooth epitaxial films may indicate that these films contain this type of structural defect.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.1262443", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "25"
      }
    ], 
    "keywords": [
      "epitaxial GaN layers", 
      "GaN layers", 
      "epitaxial films", 
      "recombination lines", 
      "structural defects", 
      "nitriding conditions", 
      "nitriding temperature", 
      "fine structure", 
      "acceptor level", 
      "donor-acceptor recombination", 
      "intrinsic structural defects", 
      "films", 
      "growth regime", 
      "microcathodoluminescence", 
      "layer", 
      "hexagonal pyramids", 
      "sapphire", 
      "regime", 
      "temperature", 
      "characteristics", 
      "surface", 
      "structure", 
      "unsaturated bonds", 
      "pyramid", 
      "form", 
      "defects", 
      "growth characteristics", 
      "conditions", 
      "region", 
      "lines", 
      "investigation", 
      "types", 
      "formation", 
      "typical growth characteristics", 
      "recombination", 
      "presence", 
      "cathodoluminescence patterns", 
      "bonds", 
      "patterns", 
      "study", 
      "levels"
    ], 
    "name": "Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence", 
    "pagination": "253-256", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1007528517"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1262443"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1262443", 
      "https://app.dimensions.ai/details/publication/pub.1007528517"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:20", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_311.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.1262443"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1262443'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1262443'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1262443'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1262443'


 

This table displays all metadata directly associated to this object as RDF triples.

133 TRIPLES      22 PREDICATES      67 URIs      59 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1262443 schema:about anzsrc-for:02
2 schema:author Nb38a38ad5d5a494895a2f78b60e5a58f
3 schema:citation sg:pub.10.1038/386351a0
4 schema:datePublished 1999-04
5 schema:datePublishedReg 1999-04-01
6 schema:description A study was made of the growth regimes of undoped epitaxial GaN layers under various substrate nitriding conditions. It was observed that at a nitriding temperature of ∼1000 °C films are formed with typical growth characteristics in the form of hexagonal pyramids separated by a smoothed surface. The cathodoluminescence pattern in the pyramids revealed a fine structure in which a region of donor-acceptor recombination could be identified. The formation of acceptor levels in this region was attributed to intrinsic structural defects in the GaN layers with unsaturated (broken) bonds. The presence of a donor-acceptor recombination line in mirror-smooth epitaxial films may indicate that these films contain this type of structural defect.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N0f485889145d4be7b262e6b8cfd76f9a
11 N67b75294f2634a8695493f289a242a35
12 sg:journal.1136630
13 schema:keywords GaN layers
14 acceptor level
15 bonds
16 cathodoluminescence patterns
17 characteristics
18 conditions
19 defects
20 donor-acceptor recombination
21 epitaxial GaN layers
22 epitaxial films
23 films
24 fine structure
25 form
26 formation
27 growth characteristics
28 growth regime
29 hexagonal pyramids
30 intrinsic structural defects
31 investigation
32 layer
33 levels
34 lines
35 microcathodoluminescence
36 nitriding conditions
37 nitriding temperature
38 patterns
39 presence
40 pyramid
41 recombination
42 recombination lines
43 regime
44 region
45 sapphire
46 structural defects
47 structure
48 study
49 surface
50 temperature
51 types
52 typical growth characteristics
53 unsaturated bonds
54 schema:name Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence
55 schema:pagination 253-256
56 schema:productId N490aa69652e04e43b4ae0b4cc8ca00f0
57 Naa67e388d7e5459da013970b4cb52f8c
58 schema:sameAs https://app.dimensions.ai/details/publication/pub.1007528517
59 https://doi.org/10.1134/1.1262443
60 schema:sdDatePublished 2022-05-20T07:20
61 schema:sdLicense https://scigraph.springernature.com/explorer/license/
62 schema:sdPublisher Nbdb04677a4624c34ab7c7b1bbdc910ec
63 schema:url https://doi.org/10.1134/1.1262443
64 sgo:license sg:explorer/license/
65 sgo:sdDataset articles
66 rdf:type schema:ScholarlyArticle
67 N0f485889145d4be7b262e6b8cfd76f9a schema:issueNumber 4
68 rdf:type schema:PublicationIssue
69 N218f0469867544ed8b12b2ee726c11d8 rdf:first sg:person.016037435257.14
70 rdf:rest N727357e42d3c4b7bb7e6105d49af4f98
71 N4590338894a34c1ebee0350860b79ece rdf:first sg:person.014121041567.87
72 rdf:rest N9321bec1b79e471fbc5a1a4c25cea9c3
73 N490aa69652e04e43b4ae0b4cc8ca00f0 schema:name dimensions_id
74 schema:value pub.1007528517
75 rdf:type schema:PropertyValue
76 N67b75294f2634a8695493f289a242a35 schema:volumeNumber 25
77 rdf:type schema:PublicationVolume
78 N727357e42d3c4b7bb7e6105d49af4f98 rdf:first sg:person.013427374503.16
79 rdf:rest N4590338894a34c1ebee0350860b79ece
80 N9321bec1b79e471fbc5a1a4c25cea9c3 rdf:first sg:person.011356344575.10
81 rdf:rest Nd679bd43115c4a0a9454730ad85bc4de
82 Naa67e388d7e5459da013970b4cb52f8c schema:name doi
83 schema:value 10.1134/1.1262443
84 rdf:type schema:PropertyValue
85 Nb38a38ad5d5a494895a2f78b60e5a58f rdf:first sg:person.010242465455.19
86 rdf:rest N218f0469867544ed8b12b2ee726c11d8
87 Nbdb04677a4624c34ab7c7b1bbdc910ec schema:name Springer Nature - SN SciGraph project
88 rdf:type schema:Organization
89 Nd679bd43115c4a0a9454730ad85bc4de rdf:first Nf700d045be70470d99a54dc09c6e692e
90 rdf:rest rdf:nil
91 Nf700d045be70470d99a54dc09c6e692e schema:affiliation grid-institutes:grid.423485.c
92 schema:familyName Konnikov
93 schema:givenName S. G.
94 rdf:type schema:Person
95 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
96 schema:name Physical Sciences
97 rdf:type schema:DefinedTerm
98 sg:journal.1136630 schema:issn 0320-0116
99 0360-120X
100 schema:name Technical Physics Letters
101 schema:publisher Pleiades Publishing
102 rdf:type schema:Periodical
103 sg:person.010242465455.19 schema:affiliation grid-institutes:grid.423485.c
104 schema:familyName Usikov
105 schema:givenName A. S.
106 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010242465455.19
107 rdf:type schema:Person
108 sg:person.011356344575.10 schema:affiliation grid-institutes:grid.423485.c
109 schema:familyName Pushnyi
110 schema:givenName B. V.
111 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011356344575.10
112 rdf:type schema:Person
113 sg:person.013427374503.16 schema:affiliation grid-institutes:grid.423485.c
114 schema:familyName Lundin
115 schema:givenName V. V.
116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16
117 rdf:type schema:Person
118 sg:person.014121041567.87 schema:affiliation grid-institutes:grid.423485.c
119 schema:familyName Zadiranov
120 schema:givenName Yu. M.
121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014121041567.87
122 rdf:type schema:Person
123 sg:person.016037435257.14 schema:affiliation grid-institutes:grid.423485.c
124 schema:familyName Tret’yakov
125 schema:givenName V. V.
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016037435257.14
127 rdf:type schema:Person
128 sg:pub.10.1038/386351a0 schema:sameAs https://app.dimensions.ai/details/publication/pub.1005865224
129 https://doi.org/10.1038/386351a0
130 rdf:type schema:CreativeWork
131 grid-institutes:grid.423485.c schema:alternateName A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
132 schema:name A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
133 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...