Ontology type: schema:ScholarlyArticle
1999-01
AUTHORSV. V. Mamutin, V. P. Ulin, V. V. Tret’yakov, S. V. Ivanov, S. G. Konnikov, P. S. Kop’ev
ABSTRACTIt is shown that GaN layers can be grown on (100)-and (111)-oriented porous single-crystal GaAs substrates by molecular-beam epitaxy with plasma activation of the nitrogen by an rf electron cyclotron resonance discharge. The resulting undoped epitaxial layers possessed ntype conductivity with a carrier concentration ∼1018. Data obtained by scanning electron microscopy and cathodoluminescence indicate that at thicknesses ∼2000 Å, continuous layers of the cubic GaN modification are obtained regardless of the substrate orientation. More... »
PAGES1-3
http://scigraph.springernature.com/pub.10.1134/1.1262360
DOIhttp://dx.doi.org/10.1134/1.1262360
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