Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-01

AUTHORS

V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov, S. V. Ivanov, S. G. Konnikov, P. S. Kop’ev

ABSTRACT

It is shown that GaN layers can be grown on (100)-and (111)-oriented porous single-crystal GaAs substrates by molecular-beam epitaxy with plasma activation of the nitrogen by an rf electron cyclotron resonance discharge. The resulting undoped epitaxial layers possessed ntype conductivity with a carrier concentration ∼1018. Data obtained by scanning electron microscopy and cathodoluminescence indicate that at thicknesses ∼2000 Å, continuous layers of the cubic GaN modification are obtained regardless of the substrate orientation. More... »

PAGES

1-3

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1262360

DOI

http://dx.doi.org/10.1134/1.1262360

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015641510


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mamutin", 
        "givenName": "V. V.", 
        "id": "sg:person.016306473533.94", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016306473533.94"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ulin", 
        "givenName": "V. P.", 
        "id": "sg:person.013300072702.45", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013300072702.45"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tret\u2019yakov", 
        "givenName": "V. V.", 
        "id": "sg:person.016037435257.14", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016037435257.14"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ivanov", 
        "givenName": "S. V.", 
        "id": "sg:person.01064304443.31", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01064304443.31"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Konnikov", 
        "givenName": "S. G.", 
        "id": "sg:person.016341426205.71", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016341426205.71"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kop\u2019ev", 
        "givenName": "P. S.", 
        "id": "sg:person.015732707444.07", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015732707444.07"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "1999-01", 
    "datePublishedReg": "1999-01-01", 
    "description": "It is shown that GaN layers can be grown on (100)-and (111)-oriented porous single-crystal GaAs substrates by molecular-beam epitaxy with plasma activation of the nitrogen by an rf electron cyclotron resonance discharge. The resulting undoped epitaxial layers possessed ntype conductivity with a carrier concentration \u223c1018. Data obtained by scanning electron microscopy and cathodoluminescence indicate that at thicknesses \u223c2000 \u00c5, continuous layers of the cubic GaN modification are obtained regardless of the substrate orientation.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.1262360", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "25"
      }
    ], 
    "keywords": [
      "molecular beam epitaxy", 
      "undoped epitaxial layers", 
      "GaAs substrates", 
      "electron microscopy", 
      "carrier concentration", 
      "single-crystal GaAs substrates", 
      "porous GaAs substrates", 
      "electron cyclotron resonance discharge", 
      "GaN layers", 
      "plasma activation", 
      "epitaxial layers", 
      "substrate orientation", 
      "epitaxy", 
      "cubic GaN", 
      "continuous layer", 
      "resonance discharge", 
      "layer", 
      "substrate", 
      "microscopy", 
      "cathodoluminescence", 
      "GaN", 
      "conductivity", 
      "thickness", 
      "modification", 
      "nitrogen", 
      "discharge", 
      "orientation", 
      "concentration", 
      "growth", 
      "data", 
      "activation"
    ], 
    "name": "Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates", 
    "pagination": "1-3", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1015641510"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1262360"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1262360", 
      "https://app.dimensions.ai/details/publication/pub.1015641510"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:21", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_340.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.1262360"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1262360'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1262360'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1262360'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1262360'


 

This table displays all metadata directly associated to this object as RDF triples.

124 TRIPLES      21 PREDICATES      57 URIs      49 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1262360 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author N44227e825ce34ba5a951a247463f7ccb
4 schema:datePublished 1999-01
5 schema:datePublishedReg 1999-01-01
6 schema:description It is shown that GaN layers can be grown on (100)-and (111)-oriented porous single-crystal GaAs substrates by molecular-beam epitaxy with plasma activation of the nitrogen by an rf electron cyclotron resonance discharge. The resulting undoped epitaxial layers possessed ntype conductivity with a carrier concentration ∼1018. Data obtained by scanning electron microscopy and cathodoluminescence indicate that at thicknesses ∼2000 Å, continuous layers of the cubic GaN modification are obtained regardless of the substrate orientation.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N07038443cc2848b28d8137d5a907b917
11 Na22e1bc85de8489dad2ed0c06cf30978
12 sg:journal.1136630
13 schema:keywords GaAs substrates
14 GaN
15 GaN layers
16 activation
17 carrier concentration
18 cathodoluminescence
19 concentration
20 conductivity
21 continuous layer
22 cubic GaN
23 data
24 discharge
25 electron cyclotron resonance discharge
26 electron microscopy
27 epitaxial layers
28 epitaxy
29 growth
30 layer
31 microscopy
32 modification
33 molecular beam epitaxy
34 nitrogen
35 orientation
36 plasma activation
37 porous GaAs substrates
38 resonance discharge
39 single-crystal GaAs substrates
40 substrate
41 substrate orientation
42 thickness
43 undoped epitaxial layers
44 schema:name Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates
45 schema:pagination 1-3
46 schema:productId N0667cc035cbd48089e49fb0545e89010
47 N67f1583808734f3bb99077bc21dc3d18
48 schema:sameAs https://app.dimensions.ai/details/publication/pub.1015641510
49 https://doi.org/10.1134/1.1262360
50 schema:sdDatePublished 2022-05-20T07:21
51 schema:sdLicense https://scigraph.springernature.com/explorer/license/
52 schema:sdPublisher N9a3bb42fc41249be887f69332d51590b
53 schema:url https://doi.org/10.1134/1.1262360
54 sgo:license sg:explorer/license/
55 sgo:sdDataset articles
56 rdf:type schema:ScholarlyArticle
57 N0667cc035cbd48089e49fb0545e89010 schema:name dimensions_id
58 schema:value pub.1015641510
59 rdf:type schema:PropertyValue
60 N07038443cc2848b28d8137d5a907b917 schema:issueNumber 1
61 rdf:type schema:PublicationIssue
62 N1e3c21c1b6024395b9a4be1552b82a59 rdf:first sg:person.013300072702.45
63 rdf:rest N75fd940951f84d9f9a7b75cdf14a6620
64 N44227e825ce34ba5a951a247463f7ccb rdf:first sg:person.016306473533.94
65 rdf:rest N1e3c21c1b6024395b9a4be1552b82a59
66 N67f1583808734f3bb99077bc21dc3d18 schema:name doi
67 schema:value 10.1134/1.1262360
68 rdf:type schema:PropertyValue
69 N75fd940951f84d9f9a7b75cdf14a6620 rdf:first sg:person.016037435257.14
70 rdf:rest Nade3243a15e6489db49a90940898deaf
71 N9a3bb42fc41249be887f69332d51590b schema:name Springer Nature - SN SciGraph project
72 rdf:type schema:Organization
73 Na22e1bc85de8489dad2ed0c06cf30978 schema:volumeNumber 25
74 rdf:type schema:PublicationVolume
75 Nade3243a15e6489db49a90940898deaf rdf:first sg:person.01064304443.31
76 rdf:rest Nfa04f48154cd4192b19d67665105075a
77 Ndb059721a9b341279684e36bbd71a0ab rdf:first sg:person.015732707444.07
78 rdf:rest rdf:nil
79 Nfa04f48154cd4192b19d67665105075a rdf:first sg:person.016341426205.71
80 rdf:rest Ndb059721a9b341279684e36bbd71a0ab
81 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
82 schema:name Physical Sciences
83 rdf:type schema:DefinedTerm
84 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
85 schema:name Other Physical Sciences
86 rdf:type schema:DefinedTerm
87 sg:journal.1136630 schema:issn 0320-0116
88 0360-120X
89 schema:name Technical Physics Letters
90 schema:publisher Pleiades Publishing
91 rdf:type schema:Periodical
92 sg:person.01064304443.31 schema:affiliation grid-institutes:grid.423485.c
93 schema:familyName Ivanov
94 schema:givenName S. V.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01064304443.31
96 rdf:type schema:Person
97 sg:person.013300072702.45 schema:affiliation grid-institutes:grid.423485.c
98 schema:familyName Ulin
99 schema:givenName V. P.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013300072702.45
101 rdf:type schema:Person
102 sg:person.015732707444.07 schema:affiliation grid-institutes:grid.423485.c
103 schema:familyName Kop’ev
104 schema:givenName P. S.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015732707444.07
106 rdf:type schema:Person
107 sg:person.016037435257.14 schema:affiliation grid-institutes:grid.423485.c
108 schema:familyName Tret’yakov
109 schema:givenName V. V.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016037435257.14
111 rdf:type schema:Person
112 sg:person.016306473533.94 schema:affiliation grid-institutes:grid.423485.c
113 schema:familyName Mamutin
114 schema:givenName V. V.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016306473533.94
116 rdf:type schema:Person
117 sg:person.016341426205.71 schema:affiliation grid-institutes:grid.423485.c
118 schema:familyName Konnikov
119 schema:givenName S. G.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016341426205.71
121 rdf:type schema:Person
122 grid-institutes:grid.423485.c schema:alternateName A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
123 schema:name A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
124 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...