Regular relief on a silicon surface as a structural defect getter View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-01

AUTHORS

L. S. Berman, I. V. Grekhov, L. S. Kostina, E. I. Belyakova, E. D. Kim, S. C. Kim

ABSTRACT

An investigation was made to determine how a regular relief on the silicon surface influences gettering in silicon-silicon-dioxide structures. The regular relief was created by a photolithographic technique before oxidation and comprised an orthogonal network of overlapping bands. The gettering was determined from the isothermal relaxation of the capacitance of a silicon-silicon-dioxide structure after switching from strong inversion to even stronger inversion. It is shown that a regular relief at the silicon-silicon-dioxide interface is an effective getter at a depth of several hundred micron. More... »

PAGES

32-34

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1262345

DOI

http://dx.doi.org/10.1134/1.1262345

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1043419746


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