GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-12

AUTHORS

A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, V. V. Mamutin, S. V. Ivanov, V. N. Zhmerik, A. F. Tsatsul’nikov, D. A. Bedarev, P. S. Kop’ev

ABSTRACT

Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength shift of the radiation. The possibility of obtaining 1.4 μm radiation at room temperature was demonstrated using In0.28Ga0.72As0.97N0.03/GaAs quantum wells. More... »

PAGES

942-944

Journal

TITLE

Technical Physics Letters

ISSUE

12

VOLUME

24

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1262326

DOI

http://dx.doi.org/10.1134/1.1262326

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1050912105


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