Lasing in submonolayer InAs/AlGaAs structures without external optical confinement View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-07

AUTHORS

B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, I. É. Kozin, M. V. Belousov, D. Bimberg

ABSTRACT

Structures having a set of planes with submonolayer InAs inclusions in an AlGaAs matrix were fabricated and studied. Lasing was observed as a result of optical excitation. It is shown that lasing takes place via the ground state of excitons localized at InAs islands and may be achieved without external optical confinement of the active region by wide-gap layers of lower refractive index. The low threshold excitation density shows that these structures may be used to develop low-threshold injection lasers in the visible range, exciton waveguides, and self-contained microcavities. More... »

PAGES

567-569

Journal

TITLE

Technical Physics Letters

ISSUE

7

VOLUME

24

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1262198

DOI

http://dx.doi.org/10.1134/1.1262198

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1012956689


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