Structural and noise characterization of VO2 films on SiO2/Si substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-07

AUTHORS

M. V. Baidakova, A. V. Bobyl’, V. G. Malyarov, V. V. Tret’yakov, I. A. Khrebtov, I. I. Shaganov

ABSTRACT

Multi-technique structural and electrophysical investigations of VO2 films on SiO2/Si substrates are carried out to study the microscopic nature of fluctuator defects — sources of lowfrequency flicker noise. It is established that the noise intensity is determined by the magnitude of the microstress fluctuations 〈ε 〉={〈(δc/c)2〉}, where c is the lattice parameter along the c-axis parallel to [011] direction in the blocks of which the film is formed. The dimensions of the blocks were determined in the direction of the c-axis (tc∼1000 Å). The suggestion is put forward that the samples contain two types of fluctuator defects: 1) V atoms jumping between the two nearest interstitial sites and 2) V atoms jumping between these interstitial sites near lattice defects. More... »

PAGES

520-522

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1261815

DOI

http://dx.doi.org/10.1134/1.1261815

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1000968901


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