Deep surface states on the interface between SiC and its native thermal oxide View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-10

AUTHORS

P. A. Ivanov, K. I. Ignat’ev, V. N. Panteleev, T. P. Samsonova

ABSTRACT

Deep surface states are discovered on the interface between 6H-SiC and its native thermal oxide by analyzing the C-V characteristics of metal-oxide-semiconductor structures measured at a high temperature (600 K). The maximum of the density of states distributed according to energy (Dtm=2×1012 cm−2· eV−1) is at an energy about 1.2 eV below the bottom of the conduction band of SiC. It is postulated that the states discovered are similar in nature to the Pb centers observed in the SiO2/Si system. More... »

PAGES

798-800

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1261806

DOI

http://dx.doi.org/10.1134/1.1261806

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1010581381


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