Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-08

AUTHORS

M. V. Maksimov, A. V. Sakharov, V. V. Lundin, A. S. Usikov, B. V. Pushnyi, I. L. Krestnikov, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, V. P. Rozum

ABSTRACT

The luminescence properties of a GaN/Al0.1Ga0.9N double heterostructure grown by vapor-phase deposition from organometallic compounds are studied. When luminescence is observed from the end, the radiation intensity shows a sharply defined threshold dependence on the pump density. The threshold excitation density at T=77 K was ∼40 kW/cm2 and the wavelength of the stimulated emission was λ=357 nm. The long-wavelength shift of the emission line at high pump densities may be attributed to renormalization of the band gap caused by many-particle interactions in the electron-hole plasma. More... »

PAGES

597-599

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1261764

DOI

http://dx.doi.org/10.1134/1.1261764

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1003101655


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