Phase effects in a semiconductor laser with diffraction extraction of radiation View Full Text


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Article Info

DATE

1997-09

AUTHORS

M. A. Kaliteevskii, E. L. Portnoi, G. S. Sokolovskii

ABSTRACT

Phase effects arising in a semiconductor laser with diffraction extraction of radiation and a distributed Bragg reflector on the substrate side are taken into account exactly quantitatively and the possibilities of using these effects in lasers is analyzed. It is shown that the phase effects studied can be used to increase the laser efficiency substantially. More... »

PAGES

699-700

References to SciGraph publications

  • 1971. Alx Ga1-x As-GaAs Heterojunctions in PHYSICS OF P-N JUNCTIONS AND SEMICONDUCTOR DEVICES
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/1.1261660

    DOI

    http://dx.doi.org/10.1134/1.1261660

    DIMENSIONS

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