Current in a high-current planar diode with a discrete emitting surface View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-06

AUTHORS

S. Ya. Belomyttsev, S. D. Korovin, I. V. Pegel’

ABSTRACT

The dependence of the current on emitter size is obtained for a high-current planar diode with a discrete emitting surface. It is shown that if the distance between the emitters appreciably exceeds their size, the dependence of the current on the ratio of the emitter size to the diode gap is a power dependence with an exponent of 3/2. The voltage dependence of the current obeys the “three-halves” law up to higher voltages than that for a planar diode with a homogeneous emitting surface. More... »

PAGES

695-699

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1259444

DOI

http://dx.doi.org/10.1134/1.1259444

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1027863380


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Institute of High-Current Electronics, Siberian Branch of the Russian Academy of Sciences, 634055, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.465280.d", 
          "name": [
            "Institute of High-Current Electronics, Siberian Branch of the Russian Academy of Sciences, 634055, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Belomyttsev", 
        "givenName": "S. Ya.", 
        "id": "sg:person.010122663321.50", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010122663321.50"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of High-Current Electronics, Siberian Branch of the Russian Academy of Sciences, 634055, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.465280.d", 
          "name": [
            "Institute of High-Current Electronics, Siberian Branch of the Russian Academy of Sciences, 634055, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Korovin", 
        "givenName": "S. D.", 
        "id": "sg:person.012035121112.60", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012035121112.60"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of High-Current Electronics, Siberian Branch of the Russian Academy of Sciences, 634055, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.465280.d", 
          "name": [
            "Institute of High-Current Electronics, Siberian Branch of the Russian Academy of Sciences, 634055, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Pegel\u2019", 
        "givenName": "I. V.", 
        "id": "sg:person.012101533211.26", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012101533211.26"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "1999-06", 
    "datePublishedReg": "1999-06-01", 
    "description": "The dependence of the current on emitter size is obtained for a high-current planar diode with a discrete emitting surface. It is shown that if the distance between the emitters appreciably exceeds their size, the dependence of the current on the ratio of the emitter size to the diode gap is a power dependence with an exponent of 3/2. The voltage dependence of the current obeys the \u201cthree-halves\u201d law up to higher voltages than that for a planar diode with a homogeneous emitting surface.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.1259444", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136240", 
        "issn": [
          "0038-5662", 
          "0044-4642"
        ], 
        "name": "Technical Physics", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "44"
      }
    ], 
    "keywords": [
      "planar diode", 
      "emitting surface", 
      "emitter size", 
      "high voltage", 
      "diodes", 
      "diode gap", 
      "power dependence", 
      "surface", 
      "three-halves", 
      "current", 
      "voltage", 
      "dependence", 
      "size", 
      "emitters", 
      "ratio", 
      "exponent", 
      "voltage dependence", 
      "distance", 
      "gap", 
      "law"
    ], 
    "name": "Current in a high-current planar diode with a discrete emitting surface", 
    "pagination": "695-699", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1027863380"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1259444"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1259444", 
      "https://app.dimensions.ai/details/publication/pub.1027863380"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-10T09:52", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220509/entities/gbq_results/article/article_334.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.1259444"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1259444'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1259444'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1259444'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1259444'


 

This table displays all metadata directly associated to this object as RDF triples.

88 TRIPLES      21 PREDICATES      45 URIs      38 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1259444 schema:about anzsrc-for:02
2 schema:author Nc977e2a4c88d428cb012e11fb52977ab
3 schema:datePublished 1999-06
4 schema:datePublishedReg 1999-06-01
5 schema:description The dependence of the current on emitter size is obtained for a high-current planar diode with a discrete emitting surface. It is shown that if the distance between the emitters appreciably exceeds their size, the dependence of the current on the ratio of the emitter size to the diode gap is a power dependence with an exponent of 3/2. The voltage dependence of the current obeys the “three-halves” law up to higher voltages than that for a planar diode with a homogeneous emitting surface.
6 schema:genre article
7 schema:inLanguage en
8 schema:isAccessibleForFree false
9 schema:isPartOf N5039e12aaa0746e9b50c45d16d857e7e
10 N53aa376bd08a496e94145e7570566dcd
11 sg:journal.1136240
12 schema:keywords current
13 dependence
14 diode gap
15 diodes
16 distance
17 emitter size
18 emitters
19 emitting surface
20 exponent
21 gap
22 high voltage
23 law
24 planar diode
25 power dependence
26 ratio
27 size
28 surface
29 three-halves
30 voltage
31 voltage dependence
32 schema:name Current in a high-current planar diode with a discrete emitting surface
33 schema:pagination 695-699
34 schema:productId N4f04cc76a6524d20abcabe2af2db9797
35 N88ef46912d5c4d4992cbbc5149e672d4
36 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027863380
37 https://doi.org/10.1134/1.1259444
38 schema:sdDatePublished 2022-05-10T09:52
39 schema:sdLicense https://scigraph.springernature.com/explorer/license/
40 schema:sdPublisher N3cdc9d6157bb4d89a223153bee25c7d9
41 schema:url https://doi.org/10.1134/1.1259444
42 sgo:license sg:explorer/license/
43 sgo:sdDataset articles
44 rdf:type schema:ScholarlyArticle
45 N3cdc9d6157bb4d89a223153bee25c7d9 schema:name Springer Nature - SN SciGraph project
46 rdf:type schema:Organization
47 N4f04cc76a6524d20abcabe2af2db9797 schema:name dimensions_id
48 schema:value pub.1027863380
49 rdf:type schema:PropertyValue
50 N5039e12aaa0746e9b50c45d16d857e7e schema:volumeNumber 44
51 rdf:type schema:PublicationVolume
52 N53aa376bd08a496e94145e7570566dcd schema:issueNumber 6
53 rdf:type schema:PublicationIssue
54 N88ef46912d5c4d4992cbbc5149e672d4 schema:name doi
55 schema:value 10.1134/1.1259444
56 rdf:type schema:PropertyValue
57 N9a969abdb6424a15bf56acd609f0116e rdf:first sg:person.012035121112.60
58 rdf:rest Na6145cd1b92e42709eed8f0bfd2680bf
59 Na6145cd1b92e42709eed8f0bfd2680bf rdf:first sg:person.012101533211.26
60 rdf:rest rdf:nil
61 Nc977e2a4c88d428cb012e11fb52977ab rdf:first sg:person.010122663321.50
62 rdf:rest N9a969abdb6424a15bf56acd609f0116e
63 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
64 schema:name Physical Sciences
65 rdf:type schema:DefinedTerm
66 sg:journal.1136240 schema:issn 0038-5662
67 0044-4642
68 schema:name Technical Physics
69 schema:publisher Pleiades Publishing
70 rdf:type schema:Periodical
71 sg:person.010122663321.50 schema:affiliation grid-institutes:grid.465280.d
72 schema:familyName Belomyttsev
73 schema:givenName S. Ya.
74 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010122663321.50
75 rdf:type schema:Person
76 sg:person.012035121112.60 schema:affiliation grid-institutes:grid.465280.d
77 schema:familyName Korovin
78 schema:givenName S. D.
79 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012035121112.60
80 rdf:type schema:Person
81 sg:person.012101533211.26 schema:affiliation grid-institutes:grid.465280.d
82 schema:familyName Pegel’
83 schema:givenName I. V.
84 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012101533211.26
85 rdf:type schema:Person
86 grid-institutes:grid.465280.d schema:alternateName Institute of High-Current Electronics, Siberian Branch of the Russian Academy of Sciences, 634055, Tomsk, Russia
87 schema:name Institute of High-Current Electronics, Siberian Branch of the Russian Academy of Sciences, 634055, Tomsk, Russia
88 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...