TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-08

AUTHORS

N. A. Cherkashin, N. A. Bert, Yu. G. Musikhin, S. V. Novikov, T. S. Cheng, C. T. Foxon

ABSTRACT

Transmission electron microscopy was used to study the microstructure of GaN films undoped or Si-doped to 1017 or 1018 cm−3 and grown by molecular-beam epitaxy on (0001) Al2O3 substrate without nitridation or a buffer layer. Defect structures including inversion domains, nanopipes, and (0001) stacking faults were studied. The influence of Si doping on the threading dislocation density and the dimensions of GaN grains bounded by inversion domains was assessed. Smoothing of the steplike morphology of the GaN film surface occurs at a Si concentration of 1017 cm−3. More... »

PAGES

867-871

Journal

TITLE

Semiconductors

ISSUE

8

VOLUME

34

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1188090

DOI

http://dx.doi.org/10.1134/1.1188090

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1048537219


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cherkashin", 
        "givenName": "N. A.", 
        "id": "sg:person.010331735221.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010331735221.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bert", 
        "givenName": "N. A.", 
        "id": "sg:person.010314101551.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010314101551.02"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Musikhin", 
        "givenName": "Yu. G.", 
        "id": "sg:person.014603755431.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Novikov", 
        "givenName": "S. V.", 
        "id": "sg:person.07747453333.65", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07747453333.65"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Nottingham", 
          "id": "https://www.grid.ac/institutes/grid.4563.4", 
          "name": [
            "School of Physics and Astronomy, University of Nottingham, NG7 2RD, Nottingham, UK"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cheng", 
        "givenName": "T. S.", 
        "id": "sg:person.07536664472.60", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07536664472.60"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Nottingham", 
          "id": "https://www.grid.ac/institutes/grid.4563.4", 
          "name": [
            "School of Physics and Astronomy, University of Nottingham, NG7 2RD, Nottingham, UK"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Foxon", 
        "givenName": "C. T.", 
        "id": "sg:person.015411120762.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015411120762.19"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1063/1.117105", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057681313"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.363264", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057988713"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.79.2835", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060815987"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.79.2835", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060815987"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.35.l74", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063057027"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2000-08", 
    "datePublishedReg": "2000-08-01", 
    "description": "Transmission electron microscopy was used to study the microstructure of GaN films undoped or Si-doped to 1017 or 1018 cm\u22123 and grown by molecular-beam epitaxy on (0001) Al2O3 substrate without nitridation or a buffer layer. Defect structures including inversion domains, nanopipes, and (0001) stacking faults were studied. The influence of Si doping on the threading dislocation density and the dimensions of GaN grains bounded by inversion domains was assessed. Smoothing of the steplike morphology of the GaN film surface occurs at a Si concentration of 1017 cm\u22123.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/1.1188090", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "8", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "34"
      }
    ], 
    "name": "TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate", 
    "pagination": "867-871", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "e7392317199d57839012e239f1e131b17c902cc7768e5e07af39b8c87ffa8822"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1188090"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1048537219"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1188090", 
      "https://app.dimensions.ai/details/publication/pub.1048537219"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T23:22", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8693_00000501.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/1.1188090"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1188090'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1188090'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1188090'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1188090'


 

This table displays all metadata directly associated to this object as RDF triples.

111 TRIPLES      21 PREDICATES      31 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1188090 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N94c3366bc19f4c38920d0caa8e80fbb0
4 schema:citation https://doi.org/10.1063/1.117105
5 https://doi.org/10.1063/1.363264
6 https://doi.org/10.1103/physrevlett.79.2835
7 https://doi.org/10.1143/jjap.35.l74
8 schema:datePublished 2000-08
9 schema:datePublishedReg 2000-08-01
10 schema:description Transmission electron microscopy was used to study the microstructure of GaN films undoped or Si-doped to 1017 or 1018 cm−3 and grown by molecular-beam epitaxy on (0001) Al2O3 substrate without nitridation or a buffer layer. Defect structures including inversion domains, nanopipes, and (0001) stacking faults were studied. The influence of Si doping on the threading dislocation density and the dimensions of GaN grains bounded by inversion domains was assessed. Smoothing of the steplike morphology of the GaN film surface occurs at a Si concentration of 1017 cm−3.
11 schema:genre research_article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf N74b8515a501141339feacb27f5fd5854
15 Nc561cb384a9d4f85966541e660706fab
16 sg:journal.1136692
17 schema:name TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate
18 schema:pagination 867-871
19 schema:productId N45b5b1fac8c942b6940c6575223b7739
20 N51072925995346e684a9d5e4cd85902b
21 Ne0a87ab808b249d8b016521be2417729
22 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048537219
23 https://doi.org/10.1134/1.1188090
24 schema:sdDatePublished 2019-04-10T23:22
25 schema:sdLicense https://scigraph.springernature.com/explorer/license/
26 schema:sdPublisher N2c165c00cd7d47098d27b1a2455c1557
27 schema:url http://link.springer.com/10.1134/1.1188090
28 sgo:license sg:explorer/license/
29 sgo:sdDataset articles
30 rdf:type schema:ScholarlyArticle
31 N1f6023c3a0bd43a3a5385e70c1f03c40 rdf:first sg:person.014603755431.88
32 rdf:rest N79cc768a92f04d939706b7c020bc0652
33 N2c165c00cd7d47098d27b1a2455c1557 schema:name Springer Nature - SN SciGraph project
34 rdf:type schema:Organization
35 N45b5b1fac8c942b6940c6575223b7739 schema:name doi
36 schema:value 10.1134/1.1188090
37 rdf:type schema:PropertyValue
38 N51072925995346e684a9d5e4cd85902b schema:name readcube_id
39 schema:value e7392317199d57839012e239f1e131b17c902cc7768e5e07af39b8c87ffa8822
40 rdf:type schema:PropertyValue
41 N74b8515a501141339feacb27f5fd5854 schema:issueNumber 8
42 rdf:type schema:PublicationIssue
43 N79cc768a92f04d939706b7c020bc0652 rdf:first sg:person.07747453333.65
44 rdf:rest N7e040d477b5c481bb2f3de0d940848dd
45 N7e040d477b5c481bb2f3de0d940848dd rdf:first sg:person.07536664472.60
46 rdf:rest Nd024b20d4ca442afbad410189d9c3a87
47 N94c3366bc19f4c38920d0caa8e80fbb0 rdf:first sg:person.010331735221.08
48 rdf:rest N9870746a571d428f8abee894e797aa20
49 N9870746a571d428f8abee894e797aa20 rdf:first sg:person.010314101551.02
50 rdf:rest N1f6023c3a0bd43a3a5385e70c1f03c40
51 Nc561cb384a9d4f85966541e660706fab schema:volumeNumber 34
52 rdf:type schema:PublicationVolume
53 Nd024b20d4ca442afbad410189d9c3a87 rdf:first sg:person.015411120762.19
54 rdf:rest rdf:nil
55 Ne0a87ab808b249d8b016521be2417729 schema:name dimensions_id
56 schema:value pub.1048537219
57 rdf:type schema:PropertyValue
58 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
59 schema:name Engineering
60 rdf:type schema:DefinedTerm
61 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
62 schema:name Materials Engineering
63 rdf:type schema:DefinedTerm
64 sg:journal.1136692 schema:issn 1063-7826
65 1090-6479
66 schema:name Semiconductors
67 rdf:type schema:Periodical
68 sg:person.010314101551.02 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
69 schema:familyName Bert
70 schema:givenName N. A.
71 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010314101551.02
72 rdf:type schema:Person
73 sg:person.010331735221.08 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
74 schema:familyName Cherkashin
75 schema:givenName N. A.
76 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010331735221.08
77 rdf:type schema:Person
78 sg:person.014603755431.88 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
79 schema:familyName Musikhin
80 schema:givenName Yu. G.
81 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88
82 rdf:type schema:Person
83 sg:person.015411120762.19 schema:affiliation https://www.grid.ac/institutes/grid.4563.4
84 schema:familyName Foxon
85 schema:givenName C. T.
86 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015411120762.19
87 rdf:type schema:Person
88 sg:person.07536664472.60 schema:affiliation https://www.grid.ac/institutes/grid.4563.4
89 schema:familyName Cheng
90 schema:givenName T. S.
91 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07536664472.60
92 rdf:type schema:Person
93 sg:person.07747453333.65 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
94 schema:familyName Novikov
95 schema:givenName S. V.
96 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07747453333.65
97 rdf:type schema:Person
98 https://doi.org/10.1063/1.117105 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057681313
99 rdf:type schema:CreativeWork
100 https://doi.org/10.1063/1.363264 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057988713
101 rdf:type schema:CreativeWork
102 https://doi.org/10.1103/physrevlett.79.2835 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060815987
103 rdf:type schema:CreativeWork
104 https://doi.org/10.1143/jjap.35.l74 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063057027
105 rdf:type schema:CreativeWork
106 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
107 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
108 rdf:type schema:Organization
109 https://www.grid.ac/institutes/grid.4563.4 schema:alternateName University of Nottingham
110 schema:name School of Physics and Astronomy, University of Nottingham, NG7 2RD, Nottingham, UK
111 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...