Analysis of charges and surface states at the interfaces of semiconductor-insulator-semiconductor structures View Full Text


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Article Info

DATE

2000-07

AUTHORS

L. S. Berman, E. I. Belyakova, L. S. Kostina, E. D. Kim, S. C. Kim

ABSTRACT

A method for determining the energy spectrum of charges and surface-state densities at the interfaces of semiconductor-insulator-semiconductor structures was developed; the method is based on the analysis of capacitance-voltage characteristics. The method was experimentally tested with Si-SiO2-Si structures prepared by direct bonding of both mirror-polished smooth wafers and wafers with a regular mesoscopic relief pattern at the inner surface of the wafers to be bonded. The density of surface states is lower at the surfaces with a regular relief pattern than that at the surfaces without the surface relief. More... »

PAGES

786-789

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1188073

DOI

http://dx.doi.org/10.1134/1.1188073

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1003606185


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