Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-05

AUTHORS

N. A. Maleev, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, D. A. Bedarev, B. V. Volovik, I. L. Krestnikov, I. N. Kayander, V. A. Odnoblyudov, A. A. Suvorova, A. F. Tsatsul’nikov, Yu. M. Shernyakov, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Bimberg

ABSTRACT

A method is proposed for growing stacked InAs/InGaAs self-organized quantum dots on GaAs substrates. The technique allows fabrication of structures exhibiting intense and narrow-line photoluminescence in the 1.3 µm wavelength region. The influence of growth conditions on structural and optical characteristics was studied. The proposed structures show promise in developing vertical-cavity surface-emitting devices. More... »

PAGES

594-597

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1188034

DOI

http://dx.doi.org/10.1134/1.1188034

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1043487290


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