Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots View Full Text


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Article Info

DATE

2000-04

AUTHORS

I. L. Krestnikov, A. V. Sakharov, W. V. Lundin, Yu. G. Musikhin, A. P. Kartashova, A. S. Usikov, A. F. Tsatsul’nikov, N. N. Ledentsov, Zh. I. Alferov, I. P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A. C. Plaut, A. A. Hoffmann, D. Bimberg

ABSTRACT

InGaN/GaN structures with dense arrays of InGaN nanodomains were grown by metallorganic chemical vapor deposition. Lasing in vertical direction occurs at low temperatures, indicating ultrahigh gains (∼ 105 cm−1) in the active region. Fabrication of an effective AlGaN/GaN distributed Bragg reflector with reflectivity exceeding 90% enables vertical lasing at room temperature in structures with a bottom distributed Bragg reflector, despite the absence of a well-reflecting upper mirror. The lasing wavelength is 401 nm, and the threshold excitation density is 400 kW/cm2. More... »

PAGES

481-487

References to SciGraph publications

  • 1998-02. RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix in JOURNAL OF ELECTRONIC MATERIALS
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