Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-04

AUTHORS

V. G. Talalaev, B. V. Novikov, S. Yu. Verbin, A. B. Novikov, Dinh Son Thath, I. V. Shchur, G. Gobsch, R. Goldhahn, N. Stein, A. Golombek, G. É. Tsyrlin, V. N. Petrov, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov

ABSTRACT

Photoluminescence (PL) spectra of InAs/GaAs heteroepitaxial structures with quantum dots (QDs) have been studied. The structures were grown by submonolayer migration-enhanced epitaxy on vicinal substrates with the amount of deposited InAs close to the critical value of 1.8 monolayer (ML). The origin and evolution of the structure of PL spectra were studied in relation to the direction and angle of misorientation, temperature, and power density and spectrum of the exciting radiation. A blue shift and narrowing of the PL band with increasing misorientation angle was established experimentally. The fact that QDs become smaller and more uniform in size is explained in terms of a lateral confinement of QDs on terraces with account taken of the step bunching effect. The temperature dependences of the positions and full widths at half-maximum (FWHM) of PL bands are fundamentally different for isolated and associated QDs. The exciton ground states contribute to all low-temperature spectral components. The excited exciton state contributes to the recombination emission from QDs, as evidenced by the temperature dependence of the integrated intensity of the PL bands. A quantitative estimate is given of the electronic structure of different families of InAs QDs grown on GaAs substrates misoriented by 7° in the [001] direction. More... »

PAGES

453-461

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1188007

DOI

http://dx.doi.org/10.1134/1.1188007

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049836759


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Talalaev", 
        "givenName": "V. G.", 
        "id": "sg:person.0615207126.40", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0615207126.40"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Novikov", 
        "givenName": "B. V.", 
        "id": "sg:person.014034276053.56", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014034276053.56"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Verbin", 
        "givenName": "S. Yu.", 
        "id": "sg:person.011652554317.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011652554317.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Novikov", 
        "givenName": "A. B.", 
        "id": "sg:person.010610052233.94", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010610052233.94"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Son Thath", 
        "givenName": "Dinh", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shchur", 
        "givenName": "I. V.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute f\u00fcr Physik, Technische Universit\u00e4t Ilmenau, 98684, Ilmenau, Germany", 
          "id": "http://www.grid.ac/institutes/grid.6553.5", 
          "name": [
            "Institute f\u00fcr Physik, Technische Universit\u00e4t Ilmenau, 98684, Ilmenau, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gobsch", 
        "givenName": "G.", 
        "id": "sg:person.01007044021.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01007044021.02"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute f\u00fcr Physik, Technische Universit\u00e4t Ilmenau, 98684, Ilmenau, Germany", 
          "id": "http://www.grid.ac/institutes/grid.6553.5", 
          "name": [
            "Institute f\u00fcr Physik, Technische Universit\u00e4t Ilmenau, 98684, Ilmenau, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Goldhahn", 
        "givenName": "R.", 
        "id": "sg:person.01103167266.25", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01103167266.25"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute f\u00fcr Physik, Technische Universit\u00e4t Ilmenau, 98684, Ilmenau, Germany", 
          "id": "http://www.grid.ac/institutes/grid.6553.5", 
          "name": [
            "Institute f\u00fcr Physik, Technische Universit\u00e4t Ilmenau, 98684, Ilmenau, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Stein", 
        "givenName": "N.", 
        "id": "sg:person.016563656233.12", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016563656233.12"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute f\u00fcr Physik, Technische Universit\u00e4t Ilmenau, 98684, Ilmenau, Germany", 
          "id": "http://www.grid.ac/institutes/grid.6553.5", 
          "name": [
            "Institute f\u00fcr Physik, Technische Universit\u00e4t Ilmenau, 98684, Ilmenau, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Golombek", 
        "givenName": "A.", 
        "id": "sg:person.014632324171.27", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014632324171.27"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Analytical Instrument Making, Russian Academy of Sciences, Rizhskii pr. 26, 198103, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Institute of Analytical Instrument Making, Russian Academy of Sciences, Rizhskii pr. 26, 198103, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsyrlin", 
        "givenName": "G. \u00c9.", 
        "id": "sg:person.010317574371.71", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010317574371.71"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Analytical Instrument Making, Russian Academy of Sciences, Rizhskii pr. 26, 198103, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Institute of Analytical Instrument Making, Russian Academy of Sciences, Rizhskii pr. 26, 198103, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Petrov", 
        "givenName": "V. N.", 
        "id": "sg:person.014503032311.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014503032311.23"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ustinov", 
        "givenName": "V. M.", 
        "id": "sg:person.010616411412.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhukov", 
        "givenName": "A. E.", 
        "id": "sg:person.011315427765.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Egorov", 
        "givenName": "A. Yu.", 
        "id": "sg:person.015162132277.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015162132277.09"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2000-04", 
    "datePublishedReg": "2000-04-01", 
    "description": "Photoluminescence (PL) spectra of InAs/GaAs heteroepitaxial structures with quantum dots (QDs) have been studied. The structures were grown by submonolayer migration-enhanced epitaxy on vicinal substrates with the amount of deposited InAs close to the critical value of 1.8 monolayer (ML). The origin and evolution of the structure of PL spectra were studied in relation to the direction and angle of misorientation, temperature, and power density and spectrum of the exciting radiation. A blue shift and narrowing of the PL band with increasing misorientation angle was established experimentally. The fact that QDs become smaller and more uniform in size is explained in terms of a lateral confinement of QDs on terraces with account taken of the step bunching effect. The temperature dependences of the positions and full widths at half-maximum (FWHM) of PL bands are fundamentally different for isolated and associated QDs. The exciton ground states contribute to all low-temperature spectral components. The excited exciton state contributes to the recombination emission from QDs, as evidenced by the temperature dependence of the integrated intensity of the PL bands. A quantitative estimate is given of the electronic structure of different families of InAs QDs grown on GaAs substrates misoriented by 7\u00b0 in the [001] direction.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.1188007", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "34"
      }
    ], 
    "keywords": [
      "quantum dots", 
      "temperature dependence", 
      "angle of misorientation", 
      "ground state", 
      "recombination emission", 
      "critical value", 
      "vicinal substrates", 
      "electronic structure", 
      "heteroepitaxial structures", 
      "quantitative estimates", 
      "PL band", 
      "full width", 
      "exciton ground state", 
      "integrated intensity", 
      "exciting radiation", 
      "misorientation angle", 
      "dependence", 
      "spectral components", 
      "migration-enhanced epitaxy", 
      "lateral confinement", 
      "exciton states", 
      "photoluminescence spectra", 
      "spectra", 
      "structure", 
      "dots", 
      "PL spectra", 
      "direction", 
      "angle", 
      "excited exciton states", 
      "GaAs substrates", 
      "epitaxy", 
      "estimates", 
      "InAs quantum dots", 
      "blue shift", 
      "band", 
      "uniform", 
      "state", 
      "different families", 
      "vicinal GaAs surfaces", 
      "terms", 
      "confinement", 
      "account", 
      "width", 
      "density", 
      "radiation", 
      "emission", 
      "GaAs surface", 
      "evolution", 
      "misorientation", 
      "power density", 
      "substrate", 
      "InAs", 
      "temperature", 
      "fact", 
      "step", 
      "values", 
      "relation", 
      "size", 
      "position", 
      "surface", 
      "intensity", 
      "more uniform", 
      "components", 
      "origin", 
      "shift", 
      "effect", 
      "family", 
      "monolayers", 
      "narrowing", 
      "amount", 
      "terraces"
    ], 
    "name": "Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces", 
    "pagination": "453-461", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1049836759"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1188007"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1188007", 
      "https://app.dimensions.ai/details/publication/pub.1049836759"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:20", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_308.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.1188007"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1188007'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1188007'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1188007'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1188007'


 

This table displays all metadata directly associated to this object as RDF triples.

234 TRIPLES      21 PREDICATES      97 URIs      89 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1188007 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author N5ba5da8cdaf74946af54d9d328b263a1
4 schema:datePublished 2000-04
5 schema:datePublishedReg 2000-04-01
6 schema:description Photoluminescence (PL) spectra of InAs/GaAs heteroepitaxial structures with quantum dots (QDs) have been studied. The structures were grown by submonolayer migration-enhanced epitaxy on vicinal substrates with the amount of deposited InAs close to the critical value of 1.8 monolayer (ML). The origin and evolution of the structure of PL spectra were studied in relation to the direction and angle of misorientation, temperature, and power density and spectrum of the exciting radiation. A blue shift and narrowing of the PL band with increasing misorientation angle was established experimentally. The fact that QDs become smaller and more uniform in size is explained in terms of a lateral confinement of QDs on terraces with account taken of the step bunching effect. The temperature dependences of the positions and full widths at half-maximum (FWHM) of PL bands are fundamentally different for isolated and associated QDs. The exciton ground states contribute to all low-temperature spectral components. The excited exciton state contributes to the recombination emission from QDs, as evidenced by the temperature dependence of the integrated intensity of the PL bands. A quantitative estimate is given of the electronic structure of different families of InAs QDs grown on GaAs substrates misoriented by 7° in the [001] direction.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N1902638c102f4f66af9e493a79a6396b
11 N8da40b3a92344b2898db9392190acf45
12 sg:journal.1136692
13 schema:keywords GaAs substrates
14 GaAs surface
15 InAs
16 InAs quantum dots
17 PL band
18 PL spectra
19 account
20 amount
21 angle
22 angle of misorientation
23 band
24 blue shift
25 components
26 confinement
27 critical value
28 density
29 dependence
30 different families
31 direction
32 dots
33 effect
34 electronic structure
35 emission
36 epitaxy
37 estimates
38 evolution
39 excited exciton states
40 exciting radiation
41 exciton ground state
42 exciton states
43 fact
44 family
45 full width
46 ground state
47 heteroepitaxial structures
48 integrated intensity
49 intensity
50 lateral confinement
51 migration-enhanced epitaxy
52 misorientation
53 misorientation angle
54 monolayers
55 more uniform
56 narrowing
57 origin
58 photoluminescence spectra
59 position
60 power density
61 quantitative estimates
62 quantum dots
63 radiation
64 recombination emission
65 relation
66 shift
67 size
68 spectra
69 spectral components
70 state
71 step
72 structure
73 substrate
74 surface
75 temperature
76 temperature dependence
77 terms
78 terraces
79 uniform
80 values
81 vicinal GaAs surfaces
82 vicinal substrates
83 width
84 schema:name Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces
85 schema:pagination 453-461
86 schema:productId N54b8dcbb7c0847649e99a35c9a6f1626
87 Ne8abeb27417d40379803d3a127dcad8b
88 schema:sameAs https://app.dimensions.ai/details/publication/pub.1049836759
89 https://doi.org/10.1134/1.1188007
90 schema:sdDatePublished 2022-05-20T07:20
91 schema:sdLicense https://scigraph.springernature.com/explorer/license/
92 schema:sdPublisher N49b9953dc8a845a99f550f12c0b77125
93 schema:url https://doi.org/10.1134/1.1188007
94 sgo:license sg:explorer/license/
95 sgo:sdDataset articles
96 rdf:type schema:ScholarlyArticle
97 N0bb8a1008d784a9f94cc88d182a34791 rdf:first sg:person.015162132277.09
98 rdf:rest rdf:nil
99 N0bce8e1b2ecc4c44ba4c2de413b7e4e6 rdf:first sg:person.010610052233.94
100 rdf:rest N2168c908f4b64bd59c043e9010295501
101 N1902638c102f4f66af9e493a79a6396b schema:issueNumber 4
102 rdf:type schema:PublicationIssue
103 N1a45c85c29dd4211a84abdeb6b067cef rdf:first sg:person.01007044021.02
104 rdf:rest N822d9df75e6b48f5824a632d0206bafa
105 N2168c908f4b64bd59c043e9010295501 rdf:first Nf2f27f08728c47c797edf6f215f37116
106 rdf:rest N480dca547e7544499e6ca0f08583b19f
107 N217897bb696e4e8ba596ad2e5f6fbc4e rdf:first sg:person.014503032311.23
108 rdf:rest N9abe0dc669534ac8bda9fb2e2a681b14
109 N262fc43a36004cf6b996ae2bf345a728 schema:affiliation grid-institutes:grid.15447.33
110 schema:familyName Shchur
111 schema:givenName I. V.
112 rdf:type schema:Person
113 N480dca547e7544499e6ca0f08583b19f rdf:first N262fc43a36004cf6b996ae2bf345a728
114 rdf:rest N1a45c85c29dd4211a84abdeb6b067cef
115 N49b9953dc8a845a99f550f12c0b77125 schema:name Springer Nature - SN SciGraph project
116 rdf:type schema:Organization
117 N4c04e0fa1455475cbd65c6f9ef2efa8a rdf:first sg:person.016563656233.12
118 rdf:rest Ne1c4836984af440394bd4dc0a600ed41
119 N50a98e48986c47a89835bfe8165c01d6 rdf:first sg:person.014034276053.56
120 rdf:rest N8507ce6f0194416a9ed363cff351d43d
121 N54b8dcbb7c0847649e99a35c9a6f1626 schema:name doi
122 schema:value 10.1134/1.1188007
123 rdf:type schema:PropertyValue
124 N5ba5da8cdaf74946af54d9d328b263a1 rdf:first sg:person.0615207126.40
125 rdf:rest N50a98e48986c47a89835bfe8165c01d6
126 N608ae09582434c22ac4124d01f9a41f7 rdf:first sg:person.011315427765.17
127 rdf:rest N0bb8a1008d784a9f94cc88d182a34791
128 N6de8a896941e4fda8c2f15d90bf89164 rdf:first sg:person.010317574371.71
129 rdf:rest N217897bb696e4e8ba596ad2e5f6fbc4e
130 N822d9df75e6b48f5824a632d0206bafa rdf:first sg:person.01103167266.25
131 rdf:rest N4c04e0fa1455475cbd65c6f9ef2efa8a
132 N8507ce6f0194416a9ed363cff351d43d rdf:first sg:person.011652554317.10
133 rdf:rest N0bce8e1b2ecc4c44ba4c2de413b7e4e6
134 N8da40b3a92344b2898db9392190acf45 schema:volumeNumber 34
135 rdf:type schema:PublicationVolume
136 N9abe0dc669534ac8bda9fb2e2a681b14 rdf:first sg:person.010616411412.30
137 rdf:rest N608ae09582434c22ac4124d01f9a41f7
138 Ne1c4836984af440394bd4dc0a600ed41 rdf:first sg:person.014632324171.27
139 rdf:rest N6de8a896941e4fda8c2f15d90bf89164
140 Ne8abeb27417d40379803d3a127dcad8b schema:name dimensions_id
141 schema:value pub.1049836759
142 rdf:type schema:PropertyValue
143 Nf2f27f08728c47c797edf6f215f37116 schema:affiliation grid-institutes:grid.15447.33
144 schema:familyName Son Thath
145 schema:givenName Dinh
146 rdf:type schema:Person
147 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
148 schema:name Physical Sciences
149 rdf:type schema:DefinedTerm
150 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
151 schema:name Other Physical Sciences
152 rdf:type schema:DefinedTerm
153 sg:journal.1136692 schema:issn 1063-7826
154 1090-6479
155 schema:name Semiconductors
156 schema:publisher Pleiades Publishing
157 rdf:type schema:Periodical
158 sg:person.01007044021.02 schema:affiliation grid-institutes:grid.6553.5
159 schema:familyName Gobsch
160 schema:givenName G.
161 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01007044021.02
162 rdf:type schema:Person
163 sg:person.010317574371.71 schema:affiliation grid-institutes:grid.4886.2
164 schema:familyName Tsyrlin
165 schema:givenName G. É.
166 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010317574371.71
167 rdf:type schema:Person
168 sg:person.010610052233.94 schema:affiliation grid-institutes:grid.15447.33
169 schema:familyName Novikov
170 schema:givenName A. B.
171 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010610052233.94
172 rdf:type schema:Person
173 sg:person.010616411412.30 schema:affiliation grid-institutes:grid.423485.c
174 schema:familyName Ustinov
175 schema:givenName V. M.
176 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30
177 rdf:type schema:Person
178 sg:person.01103167266.25 schema:affiliation grid-institutes:grid.6553.5
179 schema:familyName Goldhahn
180 schema:givenName R.
181 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01103167266.25
182 rdf:type schema:Person
183 sg:person.011315427765.17 schema:affiliation grid-institutes:grid.423485.c
184 schema:familyName Zhukov
185 schema:givenName A. E.
186 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17
187 rdf:type schema:Person
188 sg:person.011652554317.10 schema:affiliation grid-institutes:grid.15447.33
189 schema:familyName Verbin
190 schema:givenName S. Yu.
191 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011652554317.10
192 rdf:type schema:Person
193 sg:person.014034276053.56 schema:affiliation grid-institutes:grid.15447.33
194 schema:familyName Novikov
195 schema:givenName B. V.
196 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014034276053.56
197 rdf:type schema:Person
198 sg:person.014503032311.23 schema:affiliation grid-institutes:grid.4886.2
199 schema:familyName Petrov
200 schema:givenName V. N.
201 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014503032311.23
202 rdf:type schema:Person
203 sg:person.014632324171.27 schema:affiliation grid-institutes:grid.6553.5
204 schema:familyName Golombek
205 schema:givenName A.
206 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014632324171.27
207 rdf:type schema:Person
208 sg:person.015162132277.09 schema:affiliation grid-institutes:grid.423485.c
209 schema:familyName Egorov
210 schema:givenName A. Yu.
211 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015162132277.09
212 rdf:type schema:Person
213 sg:person.016563656233.12 schema:affiliation grid-institutes:grid.6553.5
214 schema:familyName Stein
215 schema:givenName N.
216 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016563656233.12
217 rdf:type schema:Person
218 sg:person.0615207126.40 schema:affiliation grid-institutes:grid.15447.33
219 schema:familyName Talalaev
220 schema:givenName V. G.
221 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0615207126.40
222 rdf:type schema:Person
223 grid-institutes:grid.15447.33 schema:alternateName Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia
224 schema:name Institute of Physics (Petrodvorets Branch), St. Petersburg State University, 198904, Petrodvorets, Russia
225 rdf:type schema:Organization
226 grid-institutes:grid.423485.c schema:alternateName Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
227 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
228 rdf:type schema:Organization
229 grid-institutes:grid.4886.2 schema:alternateName Institute of Analytical Instrument Making, Russian Academy of Sciences, Rizhskii pr. 26, 198103, St. Petersburg, Russia
230 schema:name Institute of Analytical Instrument Making, Russian Academy of Sciences, Rizhskii pr. 26, 198103, St. Petersburg, Russia
231 rdf:type schema:Organization
232 grid-institutes:grid.6553.5 schema:alternateName Institute für Physik, Technische Universität Ilmenau, 98684, Ilmenau, Germany
233 schema:name Institute für Physik, Technische Universität Ilmenau, 98684, Ilmenau, Germany
234 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...