A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-01

AUTHORS

S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, Yu. M. Shernyakov, I. N. Kayander, E. Yu. Kondrat’eva, D. A. Livshits, I. S. Tarasov, M. V. Maksimov, A. F. Tsatsul’nikov, N. N. Ledentsov, P. S. Kop’ev, D. Bimberg, Zh. I. Alferov

ABSTRACT

Spatially single-mode lasing in the wavelength range of 1.25–1.28 µm was accomplished in injection lasers on GaAs substrates. The peak output power is 110 mW at room temperature, and the differential quantum efficiency amounts to 37%. The active region of the laser is formed by an array of self-organizing InAs quantum dots. More... »

PAGES

119-121

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187954

DOI

http://dx.doi.org/10.1134/1.1187954

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1018201406


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