Ontology type: schema:ScholarlyArticle
2000-01
AUTHORSS. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, Yu. M. Shernyakov, I. N. Kayander, E. Yu. Kondrat’eva, D. A. Livshits, I. S. Tarasov, M. V. Maksimov, A. F. Tsatsul’nikov, N. N. Ledentsov, P. S. Kop’ev, D. Bimberg, Zh. I. Alferov
ABSTRACTSpatially single-mode lasing in the wavelength range of 1.25–1.28 µm was accomplished in injection lasers on GaAs substrates. The peak output power is 110 mW at room temperature, and the differential quantum efficiency amounts to 37%. The active region of the laser is formed by an array of self-organizing InAs quantum dots. More... »
PAGES119-121
http://scigraph.springernature.com/pub.10.1134/1.1187954
DOIhttp://dx.doi.org/10.1134/1.1187954
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