Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ ions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-01

AUTHORS

O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, I. N. Petrov, É. P. Domashevskaya, V. A. Terekhov

ABSTRACT

The influence of implantation of Si+ ions with energies of 30, 60, and 120 keV was studied on the dark conductivity, photoconductivity, hydrogen concentration, microstructure parameter, and special features of the ultrasoft X-ray emission spectra of a-Si:H films that were deposited at Ts=300°C by the dc-MASD and rf-PECVD methods and that differed in initial structural characteristics. More... »

PAGES

87-91

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187951

DOI

http://dx.doi.org/10.1134/1.1187951

DIMENSIONS

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