Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-02

AUTHORS

M. M. Sobolev, I. V. Kochnev, V. M. Lantratov, N. A. Bert, N. A. Cherkashin, N. N. Ledentsov, D. A. Bedarev

ABSTRACT

A report is presented on the investigation of the influence of in situ annealing of the InGaAs layer in p-n InGaAs/GaAs structures grown by the metalloorganic chemical vapor deposition upon the formation of coherently strained three-dimensional islands. The structures were studied by the methods of capacitance-voltage measurements, deep-level transient spectroscopy, transmission electron microscopy, and photoluminescence. It is established that three-dimensional islands with misfit dislocations are formed in the unannealed structure A, while quantum dots are formed in the annealed structure B. The deep-level defects were investigated. In structure A, defects of various types (EL2, EL3 (I3), I2, HL3, HS2, and H5) are present in the electron-accumulation layer. Concentrations of these traps are comparable to the shallow donor concentration, and the number of hole traps is higher than that of the electron traps. On the in situ annealing, the EL2 and EL3 defects, which are related to the formation of dislocations, disappear, and concentrations of the other defects decrease by an order of magnitude or more. For structure A, it is established that the population of the quantum states in the islands is controlled by the deep-level defects. In structure B, the effect of the Coulomb interaction of the charge carriers localized in the quantum dot with the ionized defects is observed. More... »

PAGES

195-204

References to SciGraph publications

  • 1999-05. Metastable population of self-organized InAs/GaAs quantum dots in JOURNAL OF ELECTRONIC MATERIALS
  • Journal

    TITLE

    Semiconductors

    ISSUE

    2

    VOLUME

    34

    Author Affiliations

    Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/1.1187932

    DOI

    http://dx.doi.org/10.1134/1.1187932

    DIMENSIONS

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