Superradiance in semiconductors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-12

AUTHORS

S. V. Zaitsev, L. A. Graham, D. L. Huffaker, N. Yu. Gordeev, V. I. Kopchatov, L. Ya. Karachinsky, I. I. Novikov, P. S. Kop’ev

ABSTRACT

The dependences of the characteristic superradiance time in quantum well InGaAs/GaAs laser heterostructures on the pump current, temperature, and cross sections of the active region are studied by analyzing electroluminescence spectra. The number of dipoles involved in forming a superradiant pulse is estimated using elementary equations from the theory of superradiance in two-level systems. A mechanism is proposed for superradiance in semiconductors. More... »

PAGES

1309-1314

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187914

DOI

http://dx.doi.org/10.1134/1.1187914

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031580235


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