Ontology type: schema:ScholarlyArticle
1999-10
AUTHORSG. É. Tsirlin, V. N. Petrov, N. K. Polyakov, S. A. Masalov, A. O. Golubok, D. V. Denisov, Yu. A. Kudryavtsev, B. Ya. Ber, V. M. Ustinov
ABSTRACTThe authors of this paper discuss their studies of the influence of background arsenic pressure on the properties of autoepitaxial layers of silicon grown on Si (100) surfaces by molecular-beam epitaxy. In these investigations the following experimental techniques were used: reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry. More... »
PAGES1054-1058
http://scigraph.springernature.com/pub.10.1134/1.1187863
DOIhttp://dx.doi.org/10.1134/1.1187863
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