Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-10

AUTHORS

G. É. Tsirlin, V. N. Petrov, N. K. Polyakov, S. A. Masalov, A. O. Golubok, D. V. Denisov, Yu. A. Kudryavtsev, B. Ya. Ber, V. M. Ustinov

ABSTRACT

The authors of this paper discuss their studies of the influence of background arsenic pressure on the properties of autoepitaxial layers of silicon grown on Si (100) surfaces by molecular-beam epitaxy. In these investigations the following experimental techniques were used: reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry. More... »

PAGES

1054-1058

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187863

DOI

http://dx.doi.org/10.1134/1.1187863

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021178642


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