Heteroepitaxial growth of InAs on Si: A new type of quantum dot View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-09

AUTHORS

G. E. Cyrlin, V. N. Petrov, V. G. Dubrovskii, Yu. B. Samsonenko, N. K. Polyakov, A. O. Golubok, S. A. Masalov, N. I. Komyak, V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik, A. E. Zhukov, P. S. Kop’ev, N. N. Ledentsov, Zh. I. Alferov, D. Bimberg

ABSTRACT

The mechanism for heteroepitaxial growth in the InAs/Si system is studied by reflection highenergy electron diffraction, scanning tunnelling microscopy, and photoluminescence. For certain growth conditions, InAs nanostructures are found to develop on the Si surface immediately during the growth process in the course of molecular beam epitaxy. The range of substrate temperatures that lead to formation of nanosized islands is determined. InAs quantum dots grown on a buffer Si layer with a silicon layer of thickness 50 nm grown on the top produced photoluminescence lines at a wavelength of 1.3 µm at 77K and 1.6 µm at 300 K. More... »

PAGES

972-975

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187815

DOI

http://dx.doi.org/10.1134/1.1187815

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1008790449


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