Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-07

AUTHORS

D. A. Vinokurov, V. A. Kapitonov, O. V. Kovalenkov, D. A. Livshits, Z. N. Sokolova, I. S. Tarasov, Zh. I. Alferov

ABSTRACT

Arrays of strained nanoscale InP islands in an In0.49Ga0.51P host on a GaAs(100) substrate and InAs islands in a In0.53Ga0.47As host on an InP(100) substrate are obtained by metalorganic vapor-phase epitaxy (MOVPE). Their structural and photoluminescence properties are investigated. It is shown that the nanoscale islands that are formed measure 80 nm (InP/InGaP) and 25–60 nm (InAs/InGaAs). The photoluminescence spectra of the nanoscale islands display bands in the wavelength ranges 0.66–0.72 and 1.66–1.91 µm at 77 K with maxima whose position does not vary as the effective thickness of InP and InAs increases. The radiation efficiency of the nanoscale InP islands is two orders of magnitude greater than the luminescence intensity of the InAs islands. More... »

PAGES

788-791

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187782

DOI

http://dx.doi.org/10.1134/1.1187782

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1018722716


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