Investigation of MOVPE-grown GaN layers doped with As atoms View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-07

AUTHORS

A. F. Tsatsul’nikov, B. Ya. Ber, A. P. Kartashova, Yu. A. Kudryavtsev, N. N. Ledentsov, V. V. Lundin, M. V. Maksimov, A. V. Sakharov, A. S. Usikov, Zh. I. Alfërov, A. Hoffmann

ABSTRACT

Conditions are investigated for the injection of arsenic into gallium nitride layers grown by metal-organic vapor-phase epitaxy. It is shown that the deposition of GaAs on a GaN surface relieves stresses in the GaN layer. The high-temperature overgrowth of a thin GaAs layer by a GaN layer causes As atoms to diffuse into the GaN, produces a thick, homogeneously doped GaN:As region, and creates a bright band in the photoluminescence spectrum with a maximum at ∼2.5 eV. More... »

PAGES

728-730

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187770

DOI

http://dx.doi.org/10.1134/1.1187770

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1000777537


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsatsul\u2019nikov", 
        "givenName": "A. F.", 
        "id": "sg:person.012131633577.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012131633577.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ber", 
        "givenName": "B. Ya.", 
        "id": "sg:person.013474671571.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kartashova", 
        "givenName": "A. P.", 
        "id": "sg:person.016147571313.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016147571313.88"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kudryavtsev", 
        "givenName": "Yu. A.", 
        "id": "sg:person.016157154702.79", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016157154702.79"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ledentsov", 
        "givenName": "N. N.", 
        "id": "sg:person.014140400702.37", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014140400702.37"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundin", 
        "givenName": "V. V.", 
        "id": "sg:person.013427374503.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Maksimov", 
        "givenName": "M. V.", 
        "id": "sg:person.014542352443.89", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014542352443.89"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sakharov", 
        "givenName": "A. V.", 
        "id": "sg:person.010201114167.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Usikov", 
        "givenName": "A. S.", 
        "id": "sg:person.010242465455.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010242465455.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Alf\u00ebrov", 
        "givenName": "Zh. I.", 
        "id": "sg:person.015733451717.13", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015733451717.13"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Technical University of Berlin", 
          "id": "https://www.grid.ac/institutes/grid.6734.6", 
          "name": [
            "Technische Universit\u00e4t Berlin, D-10623, Berlin, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Hoffmann", 
        "givenName": "A.", 
        "id": "sg:person.016424404640.37", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016424404640.37"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/s0022-0248(97)00079-1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050168865"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.116459", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057680672"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.118455", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057682652"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.119232", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057683420"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.121242", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057685413"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.121247", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057685418"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.122015", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057686179"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.122534", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057686691"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "1999-07", 
    "datePublishedReg": "1999-07-01", 
    "description": "Conditions are investigated for the injection of arsenic into gallium nitride layers grown by metal-organic vapor-phase epitaxy. It is shown that the deposition of GaAs on a GaN surface relieves stresses in the GaN layer. The high-temperature overgrowth of a thin GaAs layer by a GaN layer causes As atoms to diffuse into the GaN, produces a thick, homogeneously doped GaN:As region, and creates a bright band in the photoluminescence spectrum with a maximum at \u223c2.5 eV.", 
    "genre": "non_research_article", 
    "id": "sg:pub.10.1134/1.1187770", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "33"
      }
    ], 
    "name": "Investigation of MOVPE-grown GaN layers doped with As atoms", 
    "pagination": "728-730", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "03b3e7c0f3fa933dae93b5d2458cb060cad68229e992c801f9d34f87b34b0699"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1187770"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1000777537"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1187770", 
      "https://app.dimensions.ai/details/publication/pub.1000777537"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T14:57", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8663_00000498.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/1.1187770"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

158 TRIPLES      21 PREDICATES      35 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1187770 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Na684564ba8ae4f8d871aca10199e1695
4 schema:citation https://doi.org/10.1016/s0022-0248(97)00079-1
5 https://doi.org/10.1063/1.116459
6 https://doi.org/10.1063/1.118455
7 https://doi.org/10.1063/1.119232
8 https://doi.org/10.1063/1.121242
9 https://doi.org/10.1063/1.121247
10 https://doi.org/10.1063/1.122015
11 https://doi.org/10.1063/1.122534
12 schema:datePublished 1999-07
13 schema:datePublishedReg 1999-07-01
14 schema:description Conditions are investigated for the injection of arsenic into gallium nitride layers grown by metal-organic vapor-phase epitaxy. It is shown that the deposition of GaAs on a GaN surface relieves stresses in the GaN layer. The high-temperature overgrowth of a thin GaAs layer by a GaN layer causes As atoms to diffuse into the GaN, produces a thick, homogeneously doped GaN:As region, and creates a bright band in the photoluminescence spectrum with a maximum at ∼2.5 eV.
15 schema:genre non_research_article
16 schema:inLanguage en
17 schema:isAccessibleForFree false
18 schema:isPartOf N042d6809662b478b84c560c0b2fcdb4a
19 N3bdc0bc30a0c4963a2466ec21141b3ea
20 sg:journal.1136692
21 schema:name Investigation of MOVPE-grown GaN layers doped with As atoms
22 schema:pagination 728-730
23 schema:productId N1530e3ca807e4a71a531d94608880293
24 N3b5325ce97364325a9494a51472eb7a3
25 Nc0a7712fc7564f97b22e1c5bb100c3cd
26 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000777537
27 https://doi.org/10.1134/1.1187770
28 schema:sdDatePublished 2019-04-10T14:57
29 schema:sdLicense https://scigraph.springernature.com/explorer/license/
30 schema:sdPublisher N055d8bf9de5f4c81be1ace2b32cfef9e
31 schema:url http://link.springer.com/10.1134/1.1187770
32 sgo:license sg:explorer/license/
33 sgo:sdDataset articles
34 rdf:type schema:ScholarlyArticle
35 N042d6809662b478b84c560c0b2fcdb4a schema:issueNumber 7
36 rdf:type schema:PublicationIssue
37 N055d8bf9de5f4c81be1ace2b32cfef9e schema:name Springer Nature - SN SciGraph project
38 rdf:type schema:Organization
39 N1530e3ca807e4a71a531d94608880293 schema:name readcube_id
40 schema:value 03b3e7c0f3fa933dae93b5d2458cb060cad68229e992c801f9d34f87b34b0699
41 rdf:type schema:PropertyValue
42 N1568ee8a83a2472db33a4360afc7c4b8 rdf:first sg:person.010242465455.19
43 rdf:rest N9fdf5fca34bf47c2b50144bac4186a50
44 N159243e115244287a3b4cf08bfcbf92d rdf:first sg:person.014542352443.89
45 rdf:rest Nc8aed1679d56414081643dcf9e0e55e2
46 N24556ae3b6a547ed98f0d56c30ffeef5 rdf:first sg:person.016424404640.37
47 rdf:rest rdf:nil
48 N3b5325ce97364325a9494a51472eb7a3 schema:name doi
49 schema:value 10.1134/1.1187770
50 rdf:type schema:PropertyValue
51 N3bdc0bc30a0c4963a2466ec21141b3ea schema:volumeNumber 33
52 rdf:type schema:PublicationVolume
53 N53e4b5fe01f4403db71dea6d4323bf8d rdf:first sg:person.013474671571.59
54 rdf:rest N58950d97c02f486bbf4054d44e2095e2
55 N58950d97c02f486bbf4054d44e2095e2 rdf:first sg:person.016147571313.88
56 rdf:rest Ncbee6edce25440199aa8e7ef5fd4b215
57 N5ad3039e7e894ed0a5ba63f2d90f57dd rdf:first sg:person.014140400702.37
58 rdf:rest Nfce889ba235144d7ac8de9bc916f049f
59 N9fdf5fca34bf47c2b50144bac4186a50 rdf:first sg:person.015733451717.13
60 rdf:rest N24556ae3b6a547ed98f0d56c30ffeef5
61 Na684564ba8ae4f8d871aca10199e1695 rdf:first sg:person.012131633577.53
62 rdf:rest N53e4b5fe01f4403db71dea6d4323bf8d
63 Nc0a7712fc7564f97b22e1c5bb100c3cd schema:name dimensions_id
64 schema:value pub.1000777537
65 rdf:type schema:PropertyValue
66 Nc8aed1679d56414081643dcf9e0e55e2 rdf:first sg:person.010201114167.20
67 rdf:rest N1568ee8a83a2472db33a4360afc7c4b8
68 Ncbee6edce25440199aa8e7ef5fd4b215 rdf:first sg:person.016157154702.79
69 rdf:rest N5ad3039e7e894ed0a5ba63f2d90f57dd
70 Nfce889ba235144d7ac8de9bc916f049f rdf:first sg:person.013427374503.16
71 rdf:rest N159243e115244287a3b4cf08bfcbf92d
72 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
73 schema:name Engineering
74 rdf:type schema:DefinedTerm
75 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
76 schema:name Materials Engineering
77 rdf:type schema:DefinedTerm
78 sg:journal.1136692 schema:issn 1063-7826
79 1090-6479
80 schema:name Semiconductors
81 rdf:type schema:Periodical
82 sg:person.010201114167.20 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
83 schema:familyName Sakharov
84 schema:givenName A. V.
85 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20
86 rdf:type schema:Person
87 sg:person.010242465455.19 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
88 schema:familyName Usikov
89 schema:givenName A. S.
90 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010242465455.19
91 rdf:type schema:Person
92 sg:person.012131633577.53 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
93 schema:familyName Tsatsul’nikov
94 schema:givenName A. F.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012131633577.53
96 rdf:type schema:Person
97 sg:person.013427374503.16 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
98 schema:familyName Lundin
99 schema:givenName V. V.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16
101 rdf:type schema:Person
102 sg:person.013474671571.59 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
103 schema:familyName Ber
104 schema:givenName B. Ya.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59
106 rdf:type schema:Person
107 sg:person.014140400702.37 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
108 schema:familyName Ledentsov
109 schema:givenName N. N.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014140400702.37
111 rdf:type schema:Person
112 sg:person.014542352443.89 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
113 schema:familyName Maksimov
114 schema:givenName M. V.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014542352443.89
116 rdf:type schema:Person
117 sg:person.015733451717.13 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
118 schema:familyName Alfërov
119 schema:givenName Zh. I.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015733451717.13
121 rdf:type schema:Person
122 sg:person.016147571313.88 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
123 schema:familyName Kartashova
124 schema:givenName A. P.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016147571313.88
126 rdf:type schema:Person
127 sg:person.016157154702.79 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
128 schema:familyName Kudryavtsev
129 schema:givenName Yu. A.
130 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016157154702.79
131 rdf:type schema:Person
132 sg:person.016424404640.37 schema:affiliation https://www.grid.ac/institutes/grid.6734.6
133 schema:familyName Hoffmann
134 schema:givenName A.
135 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016424404640.37
136 rdf:type schema:Person
137 https://doi.org/10.1016/s0022-0248(97)00079-1 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050168865
138 rdf:type schema:CreativeWork
139 https://doi.org/10.1063/1.116459 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057680672
140 rdf:type schema:CreativeWork
141 https://doi.org/10.1063/1.118455 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057682652
142 rdf:type schema:CreativeWork
143 https://doi.org/10.1063/1.119232 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057683420
144 rdf:type schema:CreativeWork
145 https://doi.org/10.1063/1.121242 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057685413
146 rdf:type schema:CreativeWork
147 https://doi.org/10.1063/1.121247 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057685418
148 rdf:type schema:CreativeWork
149 https://doi.org/10.1063/1.122015 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057686179
150 rdf:type schema:CreativeWork
151 https://doi.org/10.1063/1.122534 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057686691
152 rdf:type schema:CreativeWork
153 https://www.grid.ac/institutes/grid.4886.2 schema:alternateName Russian Academy of Sciences
154 schema:name A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
155 rdf:type schema:Organization
156 https://www.grid.ac/institutes/grid.6734.6 schema:alternateName Technical University of Berlin
157 schema:name Technische Universität Berlin, D-10623, Berlin, Germany
158 rdf:type schema:Organization
 




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