Ontology type: schema:ScholarlyArticle
1999-07
AUTHORST. I. Voronina, T. S. Lagunova, K. D. Moiseev, A. E. Rozov, M. A. Sipovskaya, M. V. Stepanov, V. V. Sherstnev, Yu. P. Yakovlev
ABSTRACTThe electrical properties of epitaxial InAs and solid solutions based on it (InGaAsSb, InAsSbP, InAsGa, InAsP) have been investigated. It is shown that intentionally undoped crystals have n-type conductivity, which is determined by shallow donor impurities (E1=0.002–0.003 eV) and structural defects (E2=0.02–0.03 eV and E3=0.09–0.10 eV). It is shown that growth of epitaxial InAs using the neutral solvent Pb and also rare-earth elements makes it possible to reduce the electron density by almost an order of magnitude (to levels as low as 3×1015 cm−3) due to due to a decrease in the density of structural defects. More... »
PAGES719-725
http://scigraph.springernature.com/pub.10.1134/1.1187768
DOIhttp://dx.doi.org/10.1134/1.1187768
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1010890936
JSON-LD is the canonical representation for SciGraph data.
TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT
[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Physical Sciences",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Condensed Matter Physics",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Quantum Physics",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Voronina",
"givenName": "T. I.",
"id": "sg:person.012151473715.64",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012151473715.64"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Lagunova",
"givenName": "T. S.",
"id": "sg:person.015063154603.95",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015063154603.95"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Moiseev",
"givenName": "K. D.",
"id": "sg:person.014776363345.36",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014776363345.36"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Rozov",
"givenName": "A. E.",
"id": "sg:person.011075147751.57",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011075147751.57"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Sipovskaya",
"givenName": "M. A.",
"id": "sg:person.011143426761.14",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011143426761.14"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Stepanov",
"givenName": "M. V.",
"id": "sg:person.012670131446.37",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012670131446.37"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Sherstnev",
"givenName": "V. V.",
"id": "sg:person.011741151327.16",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011741151327.16"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Yakovlev",
"givenName": "Yu. P.",
"id": "sg:person.012771052533.51",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012771052533.51"
],
"type": "Person"
}
],
"citation": [
{
"id": "sg:pub.10.1007/bf02654308",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1048330687",
"https://doi.org/10.1007/bf02654308"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1007/bf02660381",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1051059603",
"https://doi.org/10.1007/bf02660381"
],
"type": "CreativeWork"
}
],
"datePublished": "1999-07",
"datePublishedReg": "1999-07-01",
"description": "The electrical properties of epitaxial InAs and solid solutions based on it (InGaAsSb, InAsSbP, InAsGa, InAsP) have been investigated. It is shown that intentionally undoped crystals have n-type conductivity, which is determined by shallow donor impurities (E1=0.002\u20130.003 eV) and structural defects (E2=0.02\u20130.03 eV and E3=0.09\u20130.10 eV). It is shown that growth of epitaxial InAs using the neutral solvent Pb and also rare-earth elements makes it possible to reduce the electron density by almost an order of magnitude (to levels as low as 3\u00d71015 cm\u22123) due to due to a decrease in the density of structural defects.",
"genre": "article",
"id": "sg:pub.10.1134/1.1187768",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1136692",
"issn": [
"1063-7826",
"1090-6479"
],
"name": "Semiconductors",
"publisher": "Pleiades Publishing",
"type": "Periodical"
},
{
"issueNumber": "7",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "33"
}
],
"keywords": [
"electrical properties",
"epitaxial InAs",
"solid solution",
"structural defects",
"type conductivity",
"indium arsenide",
"orders of magnitude",
"undoped crystals",
"properties",
"InAs",
"conductivity",
"donor impurity",
"density",
"shallow donor impurities",
"solution",
"arsenide",
"rare earth elements",
"impurities",
"defects",
"electron density",
"magnitude",
"order",
"crystals",
"elements",
"Pb",
"decrease",
"growth"
],
"name": "Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it",
"pagination": "719-725",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1010890936"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1134/1.1187768"
]
}
],
"sameAs": [
"https://doi.org/10.1134/1.1187768",
"https://app.dimensions.ai/details/publication/pub.1010890936"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-20T07:21",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_323.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.1134/1.1187768"
}
]Download the RDF metadata as: json-ld nt turtle xml License info
JSON-LD is a popular format for linked data which is fully compatible with JSON.
curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1187768'
N-Triples is a line-based linked data format ideal for batch operations.
curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1187768'
Turtle is a human-readable linked data format.
curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1187768'
RDF/XML is a standard XML format for linked data.
curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1187768'
This table displays all metadata directly associated to this object as RDF triples.
146 TRIPLES
22 PREDICATES
56 URIs
45 LITERALS
6 BLANK NODES