Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it View Full Text


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Article Info

DATE

1999-07

AUTHORS

T. I. Voronina, T. S. Lagunova, K. D. Moiseev, A. E. Rozov, M. A. Sipovskaya, M. V. Stepanov, V. V. Sherstnev, Yu. P. Yakovlev

ABSTRACT

The electrical properties of epitaxial InAs and solid solutions based on it (InGaAsSb, InAsSbP, InAsGa, InAsP) have been investigated. It is shown that intentionally undoped crystals have n-type conductivity, which is determined by shallow donor impurities (E1=0.002–0.003 eV) and structural defects (E2=0.02–0.03 eV and E3=0.09–0.10 eV). It is shown that growth of epitaxial InAs using the neutral solvent Pb and also rare-earth elements makes it possible to reduce the electron density by almost an order of magnitude (to levels as low as 3×1015 cm−3) due to due to a decrease in the density of structural defects. More... »

PAGES

719-725

References to SciGraph publications

  • 1977-03. Liquid phase epitaxial growth of InAsxSbyPl-x-y layers on InAs in JOURNAL OF ELECTRONIC MATERIALS
  • <error retrieving object. in <ERROR RETRIEVING OBJECT
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/1.1187768

    DOI

    http://dx.doi.org/10.1134/1.1187768

    DIMENSIONS

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