InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-05

AUTHORS

N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, V. M. Ustinov, I. L. Krestnikov, A. V. Lunev, A. V. Sakharov, B. V. Volovik, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alfërov, D. Bimberg

ABSTRACT

Semiconductor heterostructures with vertical optical cavities with active regions, based on arrays of InAs quantum dots inserted in an external InGaAs quantum well, have been obtained by molecular-beam epitaxy on GaAs substrates. The dependences of the reflection and photoluminescence spectra on the structural characteristics of the active region and optical cavities have been investigated. The proposed heterostructures are potentially suitable for optoelectronic devices at wavelengths near 1.3 µm. More... »

PAGES

586-589

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187733

DOI

http://dx.doi.org/10.1134/1.1187733

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1050658902


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