Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon View Full Text


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Article Info

DATE

1999-04

AUTHORS

N. A. Poklonskii, A. I. Syaglo

ABSTRACT

Electrostatics is used to model the narrowing of the energy gap ɛ2 between Hubbard bands (the A0-and A+-bands) in a p-doped semiconductor with increasing acceptor concentration N + N0 + N-1 + N+1 and with increasing degree of compensation K by donors for N−1≈KN. The screening of impurity ions by holes hopping from acceptor to acceptor is taken into account. It is shown that this effect leads to a shift of the A0-band towards the valence band and the A+-band towards the conduction band. The concentration of holes hopping in the A+-band N+1N0/N is determined by the energy of their thermal generation ɛ2 from the A0-band. The values of ɛ2 calculated for Si: B are in agreement with experimental data. More... »

PAGES

391-393

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187700

DOI

http://dx.doi.org/10.1134/1.1187700

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049590466


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