Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 µm) due to nonlinear optical effects View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-02

AUTHORS

A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev, Yu. P. Yakovlev

ABSTRACT

A study has been made of wavelength tuning in double heterostructure InAsSb/InAsSbP-based diode lasers. A simple mathematical model, which takes into account the spatially homogeneous injection and the dependence of the dielectric constant on the charge carrier density, is discussed. The wavelength can be increased or decreased, depending on the pump current and diode structure parameters, as is observed experimentally. The process of wavelength tuning proceeds with virtually zero delay time since it is determined by the photon lifetime in the cavity and in part by the lifetime of nonequilibrium charge carriers. More... »

PAGES

210-215

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187672

DOI

http://dx.doi.org/10.1134/1.1187672

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1001963283


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