Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-02

AUTHORS

M. M. Sobolev, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, Yu. G. Musikhin

ABSTRACT

The results of a study of a structure with a single array of InAs quantum dots in a GaAs matrix using capacitance-voltage measurements, deep-level transient spectroscopy (DLTS), photoluminescence spectroscopy, and transmission electron microscopy are reported. Clusters of interacting bistable defects are discovered in GaAs layers grown at low temperature. Controllable and reversible metastable populating of quantum-dot energy states and monoenergetic surface states, which depends on the temperature and conditions of a preliminary isochronal anneal, is observed. This effect is associated with the presence of bistable traps with self-trapped holes. The DLTS measurements reveal variation of the energy for the thermal ionization of holes from surface states of the InAs/GaAs heterointerface and the wetting layer as the reverse bias voltage is increased. It is theorized that these changes are caused by the built-in electric field of a dipole, which can be formed either by wetting-layer holes or by ionized levels located near the heterointerface. More... »

PAGES

157-164

Journal

TITLE

Semiconductors

ISSUE

2

VOLUME

33

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187663

DOI

http://dx.doi.org/10.1134/1.1187663

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1041006039


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sobolev", 
        "givenName": "M. M.", 
        "id": "sg:person.01031612724.92", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01031612724.92"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kovsh", 
        "givenName": "A. R.", 
        "id": "sg:person.015242115543.03", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015242115543.03"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ustinov", 
        "givenName": "V. M.", 
        "id": "sg:person.012211352412.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012211352412.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Egorov", 
        "givenName": "A. Yu.", 
        "id": "sg:person.015162132277.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015162132277.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhukov", 
        "givenName": "A. E.", 
        "id": "sg:person.011315427765.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Musikhin", 
        "givenName": "Yu. G.", 
        "id": "sg:person.014603755431.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/s0022-0248(96)01021-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021697281"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/7/10/003", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027247183"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/11/11/009", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042199631"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1049/el:19770473", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056764360"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1051/rphysap:01988002305084700", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057069038"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.102245", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057649822"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.114937", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057677827"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.116118", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057680335"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1663719", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057742162"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.345628", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057954625"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.353900", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057970428"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.93579", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058133718"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.34.4048", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060541007"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.34.4048", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060541007"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/jqe.1986.1073185", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061305529"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.28.l541", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063045016"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.36.4219", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063057827"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1557/proc-104-47", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1067905307"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "1999-02", 
    "datePublishedReg": "1999-02-01", 
    "description": "The results of a study of a structure with a single array of InAs quantum dots in a GaAs matrix using capacitance-voltage measurements, deep-level transient spectroscopy (DLTS), photoluminescence spectroscopy, and transmission electron microscopy are reported. Clusters of interacting bistable defects are discovered in GaAs layers grown at low temperature. Controllable and reversible metastable populating of quantum-dot energy states and monoenergetic surface states, which depends on the temperature and conditions of a preliminary isochronal anneal, is observed. This effect is associated with the presence of bistable traps with self-trapped holes. The DLTS measurements reveal variation of the energy for the thermal ionization of holes from surface states of the InAs/GaAs heterointerface and the wetting layer as the reverse bias voltage is increased. It is theorized that these changes are caused by the built-in electric field of a dipole, which can be formed either by wetting-layer holes or by ionized levels located near the heterointerface.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/1.1187663", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "2", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "33"
      }
    ], 
    "name": "Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures", 
    "pagination": "157-164", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "c356f44199efcda85272c33a3afdc7d33b175c858b5e775d9ad6870c67ae105f"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1187663"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1041006039"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1187663", 
      "https://app.dimensions.ai/details/publication/pub.1041006039"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T14:58", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8663_00000500.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/1.1187663"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

147 TRIPLES      21 PREDICATES      44 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1187663 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author Na76daaba35da4b91aa074e0f58c53921
4 schema:citation https://doi.org/10.1016/s0022-0248(96)01021-4
5 https://doi.org/10.1049/el:19770473
6 https://doi.org/10.1051/rphysap:01988002305084700
7 https://doi.org/10.1063/1.102245
8 https://doi.org/10.1063/1.114937
9 https://doi.org/10.1063/1.116118
10 https://doi.org/10.1063/1.1663719
11 https://doi.org/10.1063/1.345628
12 https://doi.org/10.1063/1.353900
13 https://doi.org/10.1063/1.93579
14 https://doi.org/10.1088/0268-1242/11/11/009
15 https://doi.org/10.1088/0268-1242/7/10/003
16 https://doi.org/10.1103/physrevb.34.4048
17 https://doi.org/10.1109/jqe.1986.1073185
18 https://doi.org/10.1143/jjap.28.l541
19 https://doi.org/10.1143/jjap.36.4219
20 https://doi.org/10.1557/proc-104-47
21 schema:datePublished 1999-02
22 schema:datePublishedReg 1999-02-01
23 schema:description The results of a study of a structure with a single array of InAs quantum dots in a GaAs matrix using capacitance-voltage measurements, deep-level transient spectroscopy (DLTS), photoluminescence spectroscopy, and transmission electron microscopy are reported. Clusters of interacting bistable defects are discovered in GaAs layers grown at low temperature. Controllable and reversible metastable populating of quantum-dot energy states and monoenergetic surface states, which depends on the temperature and conditions of a preliminary isochronal anneal, is observed. This effect is associated with the presence of bistable traps with self-trapped holes. The DLTS measurements reveal variation of the energy for the thermal ionization of holes from surface states of the InAs/GaAs heterointerface and the wetting layer as the reverse bias voltage is increased. It is theorized that these changes are caused by the built-in electric field of a dipole, which can be formed either by wetting-layer holes or by ionized levels located near the heterointerface.
24 schema:genre research_article
25 schema:inLanguage en
26 schema:isAccessibleForFree false
27 schema:isPartOf N326e34852f6247549d5395557f1d5a4d
28 Nb1475d5b731840eb9c64a8677ad89f17
29 sg:journal.1136692
30 schema:name Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures
31 schema:pagination 157-164
32 schema:productId N500b8b0f3aa34310808c723671a20961
33 N6ed9fa0c611e46a385d318121a5024c5
34 Ne36154ed05dd44519fcc791617562ede
35 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041006039
36 https://doi.org/10.1134/1.1187663
37 schema:sdDatePublished 2019-04-10T14:58
38 schema:sdLicense https://scigraph.springernature.com/explorer/license/
39 schema:sdPublisher N108f6958d1554b67afda0829c4440630
40 schema:url http://link.springer.com/10.1134/1.1187663
41 sgo:license sg:explorer/license/
42 sgo:sdDataset articles
43 rdf:type schema:ScholarlyArticle
44 N108f6958d1554b67afda0829c4440630 schema:name Springer Nature - SN SciGraph project
45 rdf:type schema:Organization
46 N1b3c01c620544dc69af56968d4d34ce7 rdf:first sg:person.015242115543.03
47 rdf:rest N71f77ae5f07d4533882ce582322ecc59
48 N2beebd4035ad41da96f7b8a163a5a99d rdf:first sg:person.015162132277.09
49 rdf:rest Nd1a0c96829684e8f978a62607d01b78b
50 N310a2c8226314ff8b45e77cc115cd9ae rdf:first sg:person.014603755431.88
51 rdf:rest rdf:nil
52 N326e34852f6247549d5395557f1d5a4d schema:issueNumber 2
53 rdf:type schema:PublicationIssue
54 N500b8b0f3aa34310808c723671a20961 schema:name dimensions_id
55 schema:value pub.1041006039
56 rdf:type schema:PropertyValue
57 N6ed9fa0c611e46a385d318121a5024c5 schema:name doi
58 schema:value 10.1134/1.1187663
59 rdf:type schema:PropertyValue
60 N71f77ae5f07d4533882ce582322ecc59 rdf:first sg:person.012211352412.34
61 rdf:rest N2beebd4035ad41da96f7b8a163a5a99d
62 Na76daaba35da4b91aa074e0f58c53921 rdf:first sg:person.01031612724.92
63 rdf:rest N1b3c01c620544dc69af56968d4d34ce7
64 Nb1475d5b731840eb9c64a8677ad89f17 schema:volumeNumber 33
65 rdf:type schema:PublicationVolume
66 Nd1a0c96829684e8f978a62607d01b78b rdf:first sg:person.011315427765.17
67 rdf:rest N310a2c8226314ff8b45e77cc115cd9ae
68 Ne36154ed05dd44519fcc791617562ede schema:name readcube_id
69 schema:value c356f44199efcda85272c33a3afdc7d33b175c858b5e775d9ad6870c67ae105f
70 rdf:type schema:PropertyValue
71 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
72 schema:name Physical Sciences
73 rdf:type schema:DefinedTerm
74 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
75 schema:name Other Physical Sciences
76 rdf:type schema:DefinedTerm
77 sg:journal.1136692 schema:issn 1063-7826
78 1090-6479
79 schema:name Semiconductors
80 rdf:type schema:Periodical
81 sg:person.01031612724.92 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
82 schema:familyName Sobolev
83 schema:givenName M. M.
84 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01031612724.92
85 rdf:type schema:Person
86 sg:person.011315427765.17 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
87 schema:familyName Zhukov
88 schema:givenName A. E.
89 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17
90 rdf:type schema:Person
91 sg:person.012211352412.34 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
92 schema:familyName Ustinov
93 schema:givenName V. M.
94 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012211352412.34
95 rdf:type schema:Person
96 sg:person.014603755431.88 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
97 schema:familyName Musikhin
98 schema:givenName Yu. G.
99 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88
100 rdf:type schema:Person
101 sg:person.015162132277.09 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
102 schema:familyName Egorov
103 schema:givenName A. Yu.
104 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015162132277.09
105 rdf:type schema:Person
106 sg:person.015242115543.03 schema:affiliation https://www.grid.ac/institutes/grid.4886.2
107 schema:familyName Kovsh
108 schema:givenName A. R.
109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015242115543.03
110 rdf:type schema:Person
111 https://doi.org/10.1016/s0022-0248(96)01021-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021697281
112 rdf:type schema:CreativeWork
113 https://doi.org/10.1049/el:19770473 schema:sameAs https://app.dimensions.ai/details/publication/pub.1056764360
114 rdf:type schema:CreativeWork
115 https://doi.org/10.1051/rphysap:01988002305084700 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057069038
116 rdf:type schema:CreativeWork
117 https://doi.org/10.1063/1.102245 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057649822
118 rdf:type schema:CreativeWork
119 https://doi.org/10.1063/1.114937 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057677827
120 rdf:type schema:CreativeWork
121 https://doi.org/10.1063/1.116118 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057680335
122 rdf:type schema:CreativeWork
123 https://doi.org/10.1063/1.1663719 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057742162
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1063/1.345628 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057954625
126 rdf:type schema:CreativeWork
127 https://doi.org/10.1063/1.353900 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057970428
128 rdf:type schema:CreativeWork
129 https://doi.org/10.1063/1.93579 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058133718
130 rdf:type schema:CreativeWork
131 https://doi.org/10.1088/0268-1242/11/11/009 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042199631
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1088/0268-1242/7/10/003 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027247183
134 rdf:type schema:CreativeWork
135 https://doi.org/10.1103/physrevb.34.4048 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060541007
136 rdf:type schema:CreativeWork
137 https://doi.org/10.1109/jqe.1986.1073185 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061305529
138 rdf:type schema:CreativeWork
139 https://doi.org/10.1143/jjap.28.l541 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063045016
140 rdf:type schema:CreativeWork
141 https://doi.org/10.1143/jjap.36.4219 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063057827
142 rdf:type schema:CreativeWork
143 https://doi.org/10.1557/proc-104-47 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067905307
144 rdf:type schema:CreativeWork
145 https://www.grid.ac/institutes/grid.4886.2 schema:alternateName Russian Academy of Sciences
146 schema:name A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
147 rdf:type schema:Organization
 




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