Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-02

AUTHORS

A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, N. A. Maleev, V. M. Ustinov, B. V. Volovik, M. V. Maksimov, A. F. Tsatsul’nikov, N. N. Ledentsov, Yu. M. Shernyakov, A. V. Lunev, Yu. G. Musikhin, N. A. Bert, P. S. Kop’ev, Zh. I. Alferov

ABSTRACT

A method is proposed to increase the emission wavelength from structures grown on GaAs substrates by inserting a strained InAs quantum dot array into an external InGaAs quantum well. The dependence of the luminescence peak position on the active region design was investigated for structures grown by this method. Room-temperature photo-and electroluminescence spectra in the 1.3-µm wavelength range are compared. More... »

PAGES

153-156

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187662

DOI

http://dx.doi.org/10.1134/1.1187662

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1014181125


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