Deep level centers in silicon carbide: A review View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-02

AUTHORS

A. A. Lebedev

ABSTRACT

Results from current studies of the parameters of deep centers in 6H-, 4H-, and 3C-SiC are analyzed. Data are presented on the ionization energy and capture cross sections of centers formed by doping SiC with different types of impurities or during irradiation, as well as of intrinsic defects. The involvement of these centers in radiative and nonradiative recombination is examined. This analysis of published data illustrates the large effect of intrinsic defects in the SiC crystal lattice both on the formation of deep centers and on the properties of the epitaxial layers themselves, such as their doping level and polytype homogeneity. More... »

PAGES

107-130

References to SciGraph publications

  • 1990-09. Boron-related deep centers in 6H-SiC in APPLIED PHYSICS A
  • 1992. Minority Carrier Diffusion Length in Epitaxially Grown SiC(6H) pn Diodes in AMORPHOUS AND CRYSTALLINE SILICON CARBIDE III
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/1.1187657

    DOI

    http://dx.doi.org/10.1134/1.1187657

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1029352452


    Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
    Incoming Citations Browse incoming citations for this publication using opencitations.net

    JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Physical Sciences", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Condensed Matter Physics", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.4886.2", 
              "name": [
                "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Lebedev", 
            "givenName": "A. A.", 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1007/978-3-642-84402-7_40", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1089833351", 
              "https://doi.org/10.1007/978-3-642-84402-7_40"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/bf00324007", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1011077122", 
              "https://doi.org/10.1007/bf00324007"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "1999-02", 
        "datePublishedReg": "1999-02-01", 
        "description": "Results from current studies of the parameters of deep centers in 6H-, 4H-, and 3C-SiC are analyzed. Data are presented on the ionization energy and capture cross sections of centers formed by doping SiC with different types of impurities or during irradiation, as well as of intrinsic defects. The involvement of these centers in radiative and nonradiative recombination is examined. This analysis of published data illustrates the large effect of intrinsic defects in the SiC crystal lattice both on the formation of deep centers and on the properties of the epitaxial layers themselves, such as their doping level and polytype homogeneity.", 
        "genre": "article", 
        "id": "sg:pub.10.1134/1.1187657", 
        "inLanguage": "en", 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1136692", 
            "issn": [
              "1063-7826", 
              "1090-6479"
            ], 
            "name": "Semiconductors", 
            "publisher": "Pleiades Publishing", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "2", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "33"
          }
        ], 
        "keywords": [
          "current study", 
          "center", 
          "level centers", 
          "intrinsic defects", 
          "defects", 
          "involvement", 
          "review", 
          "data", 
          "levels", 
          "study", 
          "different types", 
          "large effect", 
          "effect", 
          "results", 
          "sections", 
          "types", 
          "irradiation", 
          "analysis", 
          "parameters", 
          "formation", 
          "homogeneity", 
          "recombination", 
          "properties", 
          "layer", 
          "deep centers", 
          "energy", 
          "cross sections", 
          "SiC", 
          "impurities", 
          "nonradiative recombination", 
          "SiC crystal lattice", 
          "crystal lattice", 
          "epitaxial layers", 
          "polytype homogeneity", 
          "deep level centers", 
          "silicon carbide", 
          "carbide", 
          "ionization energy", 
          "lattice"
        ], 
        "name": "Deep level centers in silicon carbide: A review", 
        "pagination": "107-130", 
        "productId": [
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1029352452"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1134/1.1187657"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1134/1.1187657", 
          "https://app.dimensions.ai/details/publication/pub.1029352452"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2022-01-01T18:10", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_333.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "https://doi.org/10.1134/1.1187657"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1187657'

    N-Triples is a line-based linked data format ideal for batch operations.

    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1187657'

    Turtle is a human-readable linked data format.

    curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1187657'

    RDF/XML is a standard XML format for linked data.

    curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1187657'


     

    This table displays all metadata directly associated to this object as RDF triples.

    104 TRIPLES      22 PREDICATES      67 URIs      57 LITERALS      6 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1134/1.1187657 schema:about anzsrc-for:02
    2 anzsrc-for:0204
    3 schema:author Neec671aab0304ac29a31946bed349357
    4 schema:citation sg:pub.10.1007/978-3-642-84402-7_40
    5 sg:pub.10.1007/bf00324007
    6 schema:datePublished 1999-02
    7 schema:datePublishedReg 1999-02-01
    8 schema:description Results from current studies of the parameters of deep centers in 6H-, 4H-, and 3C-SiC are analyzed. Data are presented on the ionization energy and capture cross sections of centers formed by doping SiC with different types of impurities or during irradiation, as well as of intrinsic defects. The involvement of these centers in radiative and nonradiative recombination is examined. This analysis of published data illustrates the large effect of intrinsic defects in the SiC crystal lattice both on the formation of deep centers and on the properties of the epitaxial layers themselves, such as their doping level and polytype homogeneity.
    9 schema:genre article
    10 schema:inLanguage en
    11 schema:isAccessibleForFree false
    12 schema:isPartOf N431cfebd403d4e189c2ca735aa3b412e
    13 Nec92b658ef5d40f49c3428dcaeb66d6a
    14 sg:journal.1136692
    15 schema:keywords SiC
    16 SiC crystal lattice
    17 analysis
    18 carbide
    19 center
    20 cross sections
    21 crystal lattice
    22 current study
    23 data
    24 deep centers
    25 deep level centers
    26 defects
    27 different types
    28 effect
    29 energy
    30 epitaxial layers
    31 formation
    32 homogeneity
    33 impurities
    34 intrinsic defects
    35 involvement
    36 ionization energy
    37 irradiation
    38 large effect
    39 lattice
    40 layer
    41 level centers
    42 levels
    43 nonradiative recombination
    44 parameters
    45 polytype homogeneity
    46 properties
    47 recombination
    48 results
    49 review
    50 sections
    51 silicon carbide
    52 study
    53 types
    54 schema:name Deep level centers in silicon carbide: A review
    55 schema:pagination 107-130
    56 schema:productId N167874cf67e640d187a58cf055c29a8e
    57 Nd66b41d88adc4ddc92089997e2659945
    58 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029352452
    59 https://doi.org/10.1134/1.1187657
    60 schema:sdDatePublished 2022-01-01T18:10
    61 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    62 schema:sdPublisher N56018d2d713748b19e3ad05d5b7ea114
    63 schema:url https://doi.org/10.1134/1.1187657
    64 sgo:license sg:explorer/license/
    65 sgo:sdDataset articles
    66 rdf:type schema:ScholarlyArticle
    67 N167874cf67e640d187a58cf055c29a8e schema:name dimensions_id
    68 schema:value pub.1029352452
    69 rdf:type schema:PropertyValue
    70 N35a2af29915442948b59672faad9a57e schema:affiliation grid-institutes:grid.4886.2
    71 schema:familyName Lebedev
    72 schema:givenName A. A.
    73 rdf:type schema:Person
    74 N431cfebd403d4e189c2ca735aa3b412e schema:issueNumber 2
    75 rdf:type schema:PublicationIssue
    76 N56018d2d713748b19e3ad05d5b7ea114 schema:name Springer Nature - SN SciGraph project
    77 rdf:type schema:Organization
    78 Nd66b41d88adc4ddc92089997e2659945 schema:name doi
    79 schema:value 10.1134/1.1187657
    80 rdf:type schema:PropertyValue
    81 Nec92b658ef5d40f49c3428dcaeb66d6a schema:volumeNumber 33
    82 rdf:type schema:PublicationVolume
    83 Neec671aab0304ac29a31946bed349357 rdf:first N35a2af29915442948b59672faad9a57e
    84 rdf:rest rdf:nil
    85 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
    86 schema:name Physical Sciences
    87 rdf:type schema:DefinedTerm
    88 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
    89 schema:name Condensed Matter Physics
    90 rdf:type schema:DefinedTerm
    91 sg:journal.1136692 schema:issn 1063-7826
    92 1090-6479
    93 schema:name Semiconductors
    94 schema:publisher Pleiades Publishing
    95 rdf:type schema:Periodical
    96 sg:pub.10.1007/978-3-642-84402-7_40 schema:sameAs https://app.dimensions.ai/details/publication/pub.1089833351
    97 https://doi.org/10.1007/978-3-642-84402-7_40
    98 rdf:type schema:CreativeWork
    99 sg:pub.10.1007/bf00324007 schema:sameAs https://app.dimensions.ai/details/publication/pub.1011077122
    100 https://doi.org/10.1007/bf00324007
    101 rdf:type schema:CreativeWork
    102 grid-institutes:grid.4886.2 schema:alternateName A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
    103 schema:name A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
    104 rdf:type schema:Organization
     




    Preview window. Press ESC to close (or click here)


    ...