Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-01

AUTHORS

Zhao Zhen, D. A. Bedarev, B. V. Volovik, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, A. F. Tsatsul’nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, P. S. Kop’ev

ABSTRACT

The optical properties of structures containing InGaAs quantum dots in GaAs and AlGaAs matrices grown by molecular-beam epitaxy are investigated. It is shown that increasing the In content in the quantum dots has the effect of raising the energy of carrier localization and increasing the energy distance between the ground state and the excited states of carriers in the quantum dots. An investigation of the influence of postgrowth annealing on the optical properties of the structures shows that the formation of vertically coupled quantum dots and the use of a wide-gap AlGaAs matrix enhances the thermal stability of the structures. Moreover, high-temperature (830 °C) thermal annealing can improve the quality of the AlGaAs layers in structures with vertically coupled InGaAs quantum dots in an AlGaAs matrix. The results demonstrate the feasibility of using postgrowth annealing to improve the characteristics of quantum dot lasers. More... »

PAGES

80-84

Journal

TITLE

Semiconductors

ISSUE

1

VOLUME

33

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187651

DOI

http://dx.doi.org/10.1134/1.1187651

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1016351749


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