Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-08

AUTHORS

B. V. Volovik, A. F. Tsatsul’nikov, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, M. V. Maksimov, N. A. Maleev, Yu. G. Musikhin, A. A. Suvorova, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, D. Bimberg, P. Werner

ABSTRACT

When an array of strained InAs nanoislands formed on a GaAs surface is overgrown by a thin (1–10 nm) layer of an indium-containing solid solution, stimulated decomposition of the solid solution is observed. This process causes the formation of zones of elevated indium concentration in the vicinity of the nanoislands. The volume of newly formed InAs quantum dots increases as a result of this phenomenon, producing a substantial long-wavelength shift of the photoluminescence line. This effect is enhanced by lowering the substrate temperature, and it depends weakly on the average width of the band gap of the solid solution. The indicated approach has been used successfully in achieving room-temperature emission at a wavelength of 1.3 µm. More... »

PAGES

901-905

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187627

DOI

http://dx.doi.org/10.1134/1.1187627

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1019030964


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