Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-12

AUTHORS

V. V. Artamanov, M. Ya. Valakh, N. I. Klyui, V. P. Mel’nik, A. B. Romanyuk, B. N. Romanyuk, V. A. Yukhimchuk

ABSTRACT

The properties of silicon structures with silicon carbide (SiC) buried layers produced by high-dose carbon implantation followed by a high-temperature anneal are investigated by Raman and infrared spectroscopy. The influence of the coimplantation of oxygen on the features of SiC buried layer formation is also studied. It is shown that in identical implantation and post-implantation annealing regimes a SiC buried layer forms more efficiently in CZ Si wafers or in Si (CZ or FZ) subjected to the coimplantation of oxygen. Thus, oxygen promotes SiC layer formation as a result of the formation of SiOx precipitates and accommodation of the volume change in the region where the SiC phase forms. Carbon segregation and the formation of an amorphous carbon film on the SiC grain boundaries are also discovered. More... »

PAGES

1261-1265

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187611

DOI

http://dx.doi.org/10.1134/1.1187611

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1013131927


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