Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 µm) in erbium-doped a-Si:H films View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-11

AUTHORS

V. Kh. Kudoyarova, A. N. Kuznetsov, E. I. Terukov, O. B. Gusev, Yu. A. Kudryavtsev, B. Ya. Ber, G. M. Gusinskii, W. Fuhs, G. Weiser, H. Kuehne

ABSTRACT

The influence of oxygen on the photoluminescence (PL) of erbium (at 1.54 µm) in erbium-doped hydrogenated amorphous silicon (c-Si〈Er〉) is investigated. The a-Si:H〈Er〉 films studied are fabricated by cosputtering Si and Er targets using the technology of dc silane decomposition in a magnetic field. The oxygen concentration is varied from 1019 to 1021 cm−3 by increasing the partial pressure of oxygen in the chamber. It is shown that, as in the case of erbium-doped crystalline silicon (c-Si〈Er〉), oxygen has an effect on the intensity of the 1.54 µm photoluminescence in a-Si:H〈Er〉 films. The values of the erbium and oxygen concentrations at which the maximum Er PL intensity is observed are two orders of magnitude higher than in crystalline silicon. The increase in the Er PL intensity at room temperature and the weaker temperature dependence of the Er PL in comparison to c-Si〈Er,O〉 attest to the prospect of using a-Si:H〈Er〉 films in optoelectronic applications. More... »

PAGES

1234-1238

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187597

DOI

http://dx.doi.org/10.1134/1.1187597

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1035056070


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