Scanning electron microscopy of long-wavelength laser structures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-11

AUTHORS

V. A. Solov’ev, M. P. Mikhailova, K. D. Moiseev, M. V. Stepanov, V. V. Sherstnev, Yu. P. Yakovlev

ABSTRACT

New possibilities of scanning electron microscopy, using secondary-and reflected-electron signals, for determining the position of heteroboundaries in long-wavelength laser structures are reported. The formation of the indicated signals in structures of mid-infrared-range lasers of a new type based on type-II GaInAsSb/InGaAsSb heterostructures as well as in the conventional InAsSb/InAsSbP heterostructures is analyzed. The observed characteristic features of the formation of secondary-and reflected-electron signals in these structures as compared with the well-studied AlGaAs/GaAs structures are explained. The results obtained are necessary for accurate determination of an important laser parameter — the position of the p-n junction. It is shown that it is best to use the reflected-electron signal. More... »

PAGES

1157-1161

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187581

DOI

http://dx.doi.org/10.1134/1.1187581

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1041841743


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