Ontology type: schema:ScholarlyArticle
1998-10
AUTHORSP. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
ABSTRACTCapacitance spectroscopy was used to investigate the properties of Au/GaAs Schottky barriers in structures in which a thin layer of gallium arsenide grown at low temperature (LT-GaAs) and containing As clusters was sandwiched between two uniformly copper-doped layers of n-GaAs grown at standard temperatures. We detected electron accumulation in the LT-GaAs layer surrounded by two depletion regions in the adjacent n-GaAs layers. Emission of electrons from the LT-GaAs layer at 300 K results in an extended plateau in the capacitance-voltage characteristic. It is found that the presence of the 0.1 µm thick LT-GaAs layer sandwiched between the two much thicker n-GaAs layers results in an increase in the breakdown electric field to values as high as 230 kV/cm, which is much higher than typical values for standard Au/n-GaAs structures. More... »
PAGES1044-1047
http://scigraph.springernature.com/pub.10.1134/1.1187563
DOIhttp://dx.doi.org/10.1134/1.1187563
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