Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-10

AUTHORS

P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

ABSTRACT

Capacitance spectroscopy was used to investigate the properties of Au/GaAs Schottky barriers in structures in which a thin layer of gallium arsenide grown at low temperature (LT-GaAs) and containing As clusters was sandwiched between two uniformly copper-doped layers of n-GaAs grown at standard temperatures. We detected electron accumulation in the LT-GaAs layer surrounded by two depletion regions in the adjacent n-GaAs layers. Emission of electrons from the LT-GaAs layer at 300 K results in an extended plateau in the capacitance-voltage characteristic. It is found that the presence of the 0.1 µm thick LT-GaAs layer sandwiched between the two much thicker n-GaAs layers results in an increase in the breakdown electric field to values as high as 230 kV/cm, which is much higher than typical values for standard Au/n-GaAs structures. More... »

PAGES

1044-1047

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187563

DOI

http://dx.doi.org/10.1134/1.1187563

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1023892163


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