Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-10

AUTHORS

V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret’yakov, P. Werner

ABSTRACT

Molecular-beam epitaxy at 200 °C is used to grow an InAs/GaAs superlattice containing 30 InAs delta-layers with a nominal thickness of 1 monolayer, separated by GaAs layers of thickness 30 nm. It is found that the excess arsenic concentration in such a superlattice is 0.9×1020 cm−3. Annealing the samples at 500 and 600 °C for 15 min leads to precipitation of the excess arsenic mainly into the InAs delta-layers. As a result, a superlattice of two-dimensional sheets of nanoscale arsenic clusters, which coincides with the superlattice of the InAs delta-layers in the GaAs matrix, is obtained. More... »

PAGES

1036-1039

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187561

DOI

http://dx.doi.org/10.1134/1.1187561

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045352437


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