Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-09

AUTHORS

I. V. Grekhov, M. I. Veksler, P. A. Ivanov, T. P. Samsonova, A. F. Shulekin

ABSTRACT

The first observation of amplification of the photogeneration current in Au/SiO2/n-6H-SiC structures with a tunnel-thin insulator is reported. This effect can be used to increase the efficiency of existing UV-range 6H-SiC-based photodiodes. It also shows that bipolar SiC transistors with a MOS tunnel emitter can be produced.

PAGES

1024-1026

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187538

DOI

http://dx.doi.org/10.1134/1.1187538

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1011385984


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