Effect of the quantum-dot surface density in the active region on injection-laser characteristics View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-09

AUTHORS

A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, Yu. M. Shernyakov, M. V. Maksimov, A. F. Tsatsul’nikov, B. V. Volovik, A. V. Lunev, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, D. Bimberg

ABSTRACT

A new method of increasing the surface density of self-organized semiconductor quantum dots formed by molecular-beam epitaxy is proposed. A comparative analysis of the characteristics of injection lasers based on quantum-dot arrays with different surface density is made. It is shown that the use of quantum-dot arrays of higher density makes it possible to decrease substantially the threshold current density in the region of large losses and to increase the maximum gain and the maximum output radiation power. More... »

PAGES

997-1000

References to SciGraph publications

  • 1998-03. Injection lasers based on InGaAs quantum dots in an AlGaAs matrix in JOURNAL OF ELECTRONIC MATERIALS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/1.1187532

    DOI

    http://dx.doi.org/10.1134/1.1187532

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1009583673


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