Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-07

AUTHORS

A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, A. V. Lunev, A. F. Tsatsul’nikov, B. V. Volovik, N. N. Ledentsov, P. S. Kop’ev

ABSTRACT

InAs quantum dots in a InGaAs matrix grown on an InP substrate by molecular-beam epitaxy are employed as the active region of an injection laser. Lasing via quantum-dot states is observed in the temperature range 77–200 K. At the lowest threshold current density 11 A/cm2 the radiation wavelength is equal to 1.894 µm (77 K). More... »

PAGES

795-797

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187509

DOI

http://dx.doi.org/10.1134/1.1187509

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1027751345


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