Ontology type: schema:ScholarlyArticle
1998-07
AUTHORSV. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, N. N. Faleev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
ABSTRACTX-ray spectral microanalysis, optical transmission measurements at near-infrared wavelengths, and x-ray diffractometry are used to show that the isovalent indium doping of gallium arsenide during molecular-beam epitaxy at low temperatures leads to an increase in the concentration of excess arsenic trapped in the growing layer.
PAGES692-695
http://scigraph.springernature.com/pub.10.1134/1.1187485
DOIhttp://dx.doi.org/10.1134/1.1187485
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