Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-07

AUTHORS

V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, N. N. Faleev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

ABSTRACT

X-ray spectral microanalysis, optical transmission measurements at near-infrared wavelengths, and x-ray diffractometry are used to show that the isovalent indium doping of gallium arsenide during molecular-beam epitaxy at low temperatures leads to an increase in the concentration of excess arsenic trapped in the growing layer.

PAGES

692-695

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187485

DOI

http://dx.doi.org/10.1134/1.1187485

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045370671


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chaldyshev", 
        "givenName": "V. V.", 
        "id": "sg:person.010716755351.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kunitsyn", 
        "givenName": "A. E.", 
        "id": "sg:person.011601422063.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011601422063.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tret\u2019yakov", 
        "givenName": "V. V.", 
        "id": "sg:person.016037435257.14", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016037435257.14"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Faleev", 
        "givenName": "N. N.", 
        "id": "sg:person.07414336143.91", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07414336143.91"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.415877.8", 
          "name": [
            "Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Preobrazhenskii", 
        "givenName": "V. V.", 
        "id": "sg:person.010664106542.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.415877.8", 
          "name": [
            "Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Putyato", 
        "givenName": "M. A.", 
        "id": "sg:person.015271274417.07", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015271274417.07"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.415877.8", 
          "name": [
            "Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Semyagin", 
        "givenName": "B. R.", 
        "id": "sg:person.011644303155.87", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "1998-07", 
    "datePublishedReg": "1998-07-01", 
    "description": "X-ray spectral microanalysis, optical transmission measurements at near-infrared wavelengths, and x-ray diffractometry are used to show that the isovalent indium doping of gallium arsenide during molecular-beam epitaxy at low temperatures leads to an increase in the concentration of excess arsenic trapped in the growing layer.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.1187485", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "32"
      }
    ], 
    "keywords": [
      "molecular beam epitaxy", 
      "optical transmission measurements", 
      "gallium arsenide", 
      "excess arsenic", 
      "ray spectral microanalysis", 
      "transmission measurements", 
      "low temperature", 
      "spectral microanalysis", 
      "indium doping", 
      "epitaxy", 
      "arsenide", 
      "ray diffractometry", 
      "wavelength", 
      "doping", 
      "temperature", 
      "indium", 
      "microanalysis", 
      "diffractometry", 
      "measurements", 
      "layer", 
      "effect", 
      "increase", 
      "concentration", 
      "arsenic"
    ], 
    "name": "Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures", 
    "pagination": "692-695", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1045370671"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1187485"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1187485", 
      "https://app.dimensions.ai/details/publication/pub.1045370671"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:20", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_299.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.1187485"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

127 TRIPLES      21 PREDICATES      50 URIs      42 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1187485 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author N32175db7cab540eabfd66b9ffe453418
4 schema:datePublished 1998-07
5 schema:datePublishedReg 1998-07-01
6 schema:description X-ray spectral microanalysis, optical transmission measurements at near-infrared wavelengths, and x-ray diffractometry are used to show that the isovalent indium doping of gallium arsenide during molecular-beam epitaxy at low temperatures leads to an increase in the concentration of excess arsenic trapped in the growing layer.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf Na137c15bf4c84690a2ec4020acd4e7ee
11 Nc0f7bee393ff47f78185ab03b8c2dd3e
12 sg:journal.1136692
13 schema:keywords arsenic
14 arsenide
15 concentration
16 diffractometry
17 doping
18 effect
19 epitaxy
20 excess arsenic
21 gallium arsenide
22 increase
23 indium
24 indium doping
25 layer
26 low temperature
27 measurements
28 microanalysis
29 molecular beam epitaxy
30 optical transmission measurements
31 ray diffractometry
32 ray spectral microanalysis
33 spectral microanalysis
34 temperature
35 transmission measurements
36 wavelength
37 schema:name Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
38 schema:pagination 692-695
39 schema:productId N3641c93c1dec4c7cbca2bd193eb5bcba
40 N9a71329be4534ab794e209e4231e59bc
41 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045370671
42 https://doi.org/10.1134/1.1187485
43 schema:sdDatePublished 2022-05-20T07:20
44 schema:sdLicense https://scigraph.springernature.com/explorer/license/
45 schema:sdPublisher N3c1313fb31b44278903cb92f8ebaefc0
46 schema:url https://doi.org/10.1134/1.1187485
47 sgo:license sg:explorer/license/
48 sgo:sdDataset articles
49 rdf:type schema:ScholarlyArticle
50 N32175db7cab540eabfd66b9ffe453418 rdf:first sg:person.010716755351.29
51 rdf:rest N59a957a5c34f4758b6d58202ce9f78a5
52 N3641c93c1dec4c7cbca2bd193eb5bcba schema:name dimensions_id
53 schema:value pub.1045370671
54 rdf:type schema:PropertyValue
55 N3c1313fb31b44278903cb92f8ebaefc0 schema:name Springer Nature - SN SciGraph project
56 rdf:type schema:Organization
57 N3f579ebb9f524c8dad98e32b64067d05 rdf:first sg:person.016037435257.14
58 rdf:rest N8bc38baf2e3944b586c4f8a7e9e41f4c
59 N59a957a5c34f4758b6d58202ce9f78a5 rdf:first sg:person.011601422063.09
60 rdf:rest N3f579ebb9f524c8dad98e32b64067d05
61 N72086ae2038d4bcd8cc83bb763a76ac6 rdf:first sg:person.010664106542.73
62 rdf:rest Nc3a01008123f42518b3dadf0487b1816
63 N7a377fe594ce4b52bfb03a473ffec42a rdf:first sg:person.011644303155.87
64 rdf:rest rdf:nil
65 N8bc38baf2e3944b586c4f8a7e9e41f4c rdf:first sg:person.07414336143.91
66 rdf:rest N72086ae2038d4bcd8cc83bb763a76ac6
67 N9a71329be4534ab794e209e4231e59bc schema:name doi
68 schema:value 10.1134/1.1187485
69 rdf:type schema:PropertyValue
70 Na137c15bf4c84690a2ec4020acd4e7ee schema:issueNumber 7
71 rdf:type schema:PublicationIssue
72 Nc0f7bee393ff47f78185ab03b8c2dd3e schema:volumeNumber 32
73 rdf:type schema:PublicationVolume
74 Nc3a01008123f42518b3dadf0487b1816 rdf:first sg:person.015271274417.07
75 rdf:rest N7a377fe594ce4b52bfb03a473ffec42a
76 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
77 schema:name Physical Sciences
78 rdf:type schema:DefinedTerm
79 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
80 schema:name Other Physical Sciences
81 rdf:type schema:DefinedTerm
82 sg:journal.1136692 schema:issn 1063-7826
83 1090-6479
84 schema:name Semiconductors
85 schema:publisher Pleiades Publishing
86 rdf:type schema:Periodical
87 sg:person.010664106542.73 schema:affiliation grid-institutes:grid.415877.8
88 schema:familyName Preobrazhenskii
89 schema:givenName V. V.
90 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73
91 rdf:type schema:Person
92 sg:person.010716755351.29 schema:affiliation grid-institutes:grid.423485.c
93 schema:familyName Chaldyshev
94 schema:givenName V. V.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29
96 rdf:type schema:Person
97 sg:person.011601422063.09 schema:affiliation grid-institutes:grid.423485.c
98 schema:familyName Kunitsyn
99 schema:givenName A. E.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011601422063.09
101 rdf:type schema:Person
102 sg:person.011644303155.87 schema:affiliation grid-institutes:grid.415877.8
103 schema:familyName Semyagin
104 schema:givenName B. R.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87
106 rdf:type schema:Person
107 sg:person.015271274417.07 schema:affiliation grid-institutes:grid.415877.8
108 schema:familyName Putyato
109 schema:givenName M. A.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015271274417.07
111 rdf:type schema:Person
112 sg:person.016037435257.14 schema:affiliation grid-institutes:grid.423485.c
113 schema:familyName Tret’yakov
114 schema:givenName V. V.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016037435257.14
116 rdf:type schema:Person
117 sg:person.07414336143.91 schema:affiliation grid-institutes:grid.423485.c
118 schema:familyName Faleev
119 schema:givenName N. N.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07414336143.91
121 rdf:type schema:Person
122 grid-institutes:grid.415877.8 schema:alternateName Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia
123 schema:name Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia
124 rdf:type schema:Organization
125 grid-institutes:grid.423485.c schema:alternateName A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
126 schema:name A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
127 rdf:type schema:Organization
 




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