Self-organizing nanoheterostructures in InGaAsP solid solutions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-06

AUTHORS

L. S. Vavilova, A. V. Ivanova, V. A. Kapitonov, A. V. Murashova, I. S. Tarasov, I. N. Arsent’ev, N. A. Bert, Yu. G. Musikhin, N. A. Pikhtin, N. N. Faleev

ABSTRACT

This paper discusses the photoluminescence and x-ray microstructural properties of epitaxial layers of solid solutions of InGaAsP isoperiodic with InP (100) and GaAs (100) substrates, obtained in the region of immiscibility and spinodal decay. It shows that there is good agreement of the experimental results with the theoretical model of spinodal decay. The boundaries of the region in which two solid phases of different composition exist in epitaxial layers of solid solutions of InGaAsP isoperiodic with the InP and GaAs substrates are determined. A periodic nanoheterostructure is obtained in an epitaxial layer of InGaAsP solid solutions with a repetition period of 650±30 Å in two mutually perpendicular directions. More... »

PAGES

590-593

Journal

TITLE

Semiconductors

ISSUE

6

VOLUME

32

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187444

DOI

http://dx.doi.org/10.1134/1.1187444

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1013688461


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