High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1998-01

AUTHORS

N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

ABSTRACT

InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature are investigated by high-resolution x-ray diffractometry. It is shown that despite a very high density of point defects due to the presence of excess arsenic, the as-grown superlattice has high crystal perfection. An analysis of the changes in the x-ray diffraction curves shows that high-temperature annealing, which is accompanied by the formation of As clusters and diffusion of indium, produces significant structural transformations in the GaAs matrix and at the interfaces. More... »

PAGES

19-25

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187352

DOI

http://dx.doi.org/10.1134/1.1187352

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1011541716


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