Ontology type: schema:ScholarlyArticle
1998-01
AUTHORSN. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
ABSTRACTInAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature are investigated by high-resolution x-ray diffractometry. It is shown that despite a very high density of point defects due to the presence of excess arsenic, the as-grown superlattice has high crystal perfection. An analysis of the changes in the x-ray diffraction curves shows that high-temperature annealing, which is accompanied by the formation of As clusters and diffusion of indium, produces significant structural transformations in the GaAs matrix and at the interfaces. More... »
PAGES19-25
http://scigraph.springernature.com/pub.10.1134/1.1187352
DOIhttp://dx.doi.org/10.1134/1.1187352
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1011541716
JSON-LD is the canonical representation for SciGraph data.
TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT
[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Physical Sciences",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Condensed Matter Physics",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Quantum Physics",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Faleev",
"givenName": "N. N.",
"id": "sg:person.07414336143.91",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07414336143.91"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Chaldyshev",
"givenName": "V. V.",
"id": "sg:person.010716755351.29",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Kunitsyn",
"givenName": "A. E.",
"id": "sg:person.011601422063.09",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011601422063.09"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.4886.2",
"name": [
"A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Tret\u2019yakov",
"givenName": "V. V.",
"id": "sg:person.016037435257.14",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016037435257.14"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.415877.8",
"name": [
"Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Preobrazhenskii",
"givenName": "V. V.",
"id": "sg:person.010664106542.73",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.415877.8",
"name": [
"Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Putyato",
"givenName": "M. A.",
"id": "sg:person.015271274417.07",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015271274417.07"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.415877.8",
"name": [
"Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Semyagin",
"givenName": "B. R.",
"id": "sg:person.011644303155.87",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87"
],
"type": "Person"
}
],
"datePublished": "1998-01",
"datePublishedReg": "1998-01-01",
"description": "InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature are investigated by high-resolution x-ray diffractometry. It is shown that despite a very high density of point defects due to the presence of excess arsenic, the as-grown superlattice has high crystal perfection. An analysis of the changes in the x-ray diffraction curves shows that high-temperature annealing, which is accompanied by the formation of As clusters and diffusion of indium, produces significant structural transformations in the GaAs matrix and at the interfaces.",
"genre": "article",
"id": "sg:pub.10.1134/1.1187352",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1136692",
"issn": [
"1063-7826",
"1090-6479"
],
"name": "Semiconductors",
"publisher": "Pleiades Publishing",
"type": "Periodical"
},
{
"issueNumber": "1",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "32"
}
],
"keywords": [
"molecular beam epitaxy",
"high-temperature annealing",
"diffusion of indium",
"high crystal perfection",
"low temperature",
"significant structural transformation",
"ray diffractometry",
"ray diffraction curves",
"point defects",
"epitaxy",
"excess arsenic",
"GaAs matrix",
"superlattices",
"temperature",
"structural transformation",
"high density",
"crystal perfection",
"diffraction curves",
"annealing",
"ray diffraction studies",
"diffractometry",
"indium",
"interface",
"diffusion",
"diffraction studies",
"matrix",
"density",
"curves",
"defects",
"arsenic",
"perfection",
"formation",
"transformation",
"analysis",
"presence",
"changes",
"study",
"clusters"
],
"name": "High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature",
"pagination": "19-25",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1011541716"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1134/1.1187352"
]
}
],
"sameAs": [
"https://doi.org/10.1134/1.1187352",
"https://app.dimensions.ai/details/publication/pub.1011541716"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-20T07:20",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_292.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.1134/1.1187352"
}
]Download the RDF metadata as: json-ld nt turtle xml License info
JSON-LD is a popular format for linked data which is fully compatible with JSON.
curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1187352'
N-Triples is a line-based linked data format ideal for batch operations.
curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1187352'
Turtle is a human-readable linked data format.
curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1187352'
RDF/XML is a standard XML format for linked data.
curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1187352'
This table displays all metadata directly associated to this object as RDF triples.
145 TRIPLES
21 PREDICATES
65 URIs
56 LITERALS
6 BLANK NODES