Effect of laser radiation on the electronic density of states of an 〈insulator gallium arsenide〉 interface View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-04

AUTHORS

L. N. Vozmilova, V. I. Gaman, V. M. Kalygina, A. V. Panin, T. P. Smirnova

ABSTRACT

The effect of annealing with pulsed laser radiation with wavelengths of 0.69 and 308 µm on the capacitance-voltage and conductance-voltage characteristics and the density of surface states at the insulator-(n, p)-GaAs interface as a function of the radiation energy density has been investigated.

PAGES

418-422

Journal

TITLE

Semiconductors

ISSUE

4

VOLUME

31

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1187175

DOI

http://dx.doi.org/10.1134/1.1187175

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044770485


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